Global simulation of coupled carbon and oxygen transport in a unidirectional solidification furnace for solar cells

B. Gao, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

For an accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was implemented. Both the gas flow and silicon melt flow were considered. Five chemical reactions were included during the transportation of impurities. The simulation results agreed well with experimental data. The effects of flow rate and pressure on the impurities were examined. An increase in the flow rate can reduce both carbon and oxygen impurities in the crystal, though the reduction of carbon is more obvious. An increase in gas pressure can also obviously reduce the oxygen impurity but has only a small effect on the carbon impurity.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number2
DOIs
Publication statusPublished - 2010

Fingerprint

solidification
furnaces
Solidification
Solar cells
Furnaces
Carbon
solar cells
Impurities
Oxygen
impurities
carbon
oxygen
simulation
Silicon
flow velocity
Flow rate
silicon
gas pressure
gas flow
Flow of gases

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

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AB - For an accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was implemented. Both the gas flow and silicon melt flow were considered. Five chemical reactions were included during the transportation of impurities. The simulation results agreed well with experimental data. The effects of flow rate and pressure on the impurities were examined. An increase in the flow rate can reduce both carbon and oxygen impurities in the crystal, though the reduction of carbon is more obvious. An increase in gas pressure can also obviously reduce the oxygen impurity but has only a small effect on the carbon impurity.

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