Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

Taizoh Sadoh, J. H. Park, R. Aoki, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.

Original languageEnglish
Title of host publicationULSI Process Integration 9
EditorsJ. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai
PublisherElectrochemical Society Inc.
Pages21-27
Number of pages7
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2015
EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number10
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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