Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

Taizoh Sadoh; J. H. Park; R. Aoki; M. Miyao

doi:10.1149/06910.0021ecst

Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

Taizoh Sadoh, J. H. Park, R. Aoki, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.

Original language	English
Title of host publication	ULSI Process Integration 9
Editors	J. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai
Publisher	Electrochemical Society Inc.
Pages	21-27
Number of pages	7
Edition	10
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06910.0021ecst
Publication status	Published - Jan 1 2015
Event	Symposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	10
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Country	United States
City	Phoenix
Period	10/11/15 → 10/15/15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/06910.0021ecst

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Sadoh, T., Park, J. H., Aoki, R., & Miyao, M. (2015). Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics. In J. Murota, C. Claeys, S. Deleonibus, M. Tao, & H. Iwai (Eds.), ULSI Process Integration 9 (10 ed., pp. 21-27). (ECS Transactions; Vol. 69, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/06910.0021ecst

Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics. / Sadoh, Taizoh; Park, J. H.; Aoki, R.; Miyao, M.

ULSI Process Integration 9. ed. / J. Murota; C. Claeys; S. Deleonibus; M. Tao; H. Iwai. 10. ed. Electrochemical Society Inc., 2015. p. 21-27 (ECS Transactions; Vol. 69, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadoh, T, Park, JH, Aoki, R & Miyao, M 2015, Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics. in J Murota, C Claeys, S Deleonibus, M Tao & H Iwai (eds), ULSI Process Integration 9. 10 edn, ECS Transactions, no. 10, vol. 69, Electrochemical Society Inc., pp. 21-27, Symposium on ULSI Process Integration 9 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06910.0021ecst

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abstract = "A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.",

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