Abstract
A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.
| Original language | English |
|---|---|
| Title of host publication | ULSI Process Integration 9 |
| Editors | J. Murota, C. Claeys, S. Deleonibus, M. Tao, H. Iwai |
| Publisher | Electrochemical Society Inc. |
| Pages | 21-27 |
| Number of pages | 7 |
| Edition | 10 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - Jan 1 2015 |
| Event | Symposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 10 |
| Volume | 69 |
| ISSN (Print) | 1938-6737 |
| ISSN (Electronic) | 1938-5862 |
Other
| Other | Symposium on ULSI Process Integration 9 - 228th ECS Meeting |
|---|---|
| Country | United States |
| City | Phoenix |
| Period | 10/11/15 → 10/15/15 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics. / Sadoh, Taizoh; Park, J. H.; Aoki, R.; Miyao, M.
ULSI Process Integration 9. ed. / J. Murota; C. Claeys; S. Deleonibus; M. Tao; H. Iwai. 10. ed. Electrochemical Society Inc., 2015. p. 21-27 (ECS Transactions; Vol. 69, No. 10).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics
AU - Sadoh, Taizoh
AU - Park, J. H.
AU - Aoki, R.
AU - Miyao, M.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.
AB - A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=84946079491&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946079491&partnerID=8YFLogxK
U2 - 10.1149/06910.0021ecst
DO - 10.1149/06910.0021ecst
M3 - Conference contribution
AN - SCOPUS:84946079491
T3 - ECS Transactions
SP - 21
EP - 27
BT - ULSI Process Integration 9
A2 - Murota, J.
A2 - Claeys, C.
A2 - Deleonibus, S.
A2 - Tao, M.
A2 - Iwai, H.
PB - Electrochemical Society Inc.
ER -