TY - GEN
T1 - Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics
AU - Sadoh, T.
AU - Park, J. H.
AU - Aoki, R.
AU - Miyao, M.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.
AB - A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=84946079491&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946079491&partnerID=8YFLogxK
U2 - 10.1149/06910.0021ecst
DO - 10.1149/06910.0021ecst
M3 - Conference contribution
AN - SCOPUS:84946079491
T3 - ECS Transactions
SP - 21
EP - 27
BT - ULSI Process Integration 9
A2 - Claeys, C.
A2 - Murota, J.
A2 - Tao, M.
A2 - Iwai, H.
A2 - Deleonibus, S.
PB - Electrochemical Society Inc.
T2 - Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Y2 - 10 October 2015 through 14 October 2015
ER -