Grain boundaries in BaTiO3 with a small cation nonstoichiometry

T. Yamamoto, Y. Ikuhara, Katsuro Hayashi, T. Sakuma

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Grain boundary structure in BaTiO3 doped with a small amount of dopants was examined. It was found that grain growth behavior was very sensitive to the substituting sites of dopants, i.e., A- or B-site in a perovskite structure ABO3. Abnormal grain growth takes place in B-site type dopant excess BaTiO3 while normal grain growth occurs in A-site type dopant excess BaTiO3. High-resolution electron microscopy (HRTEM) study associated with electron energy-loss spectroscopy (EELS) revealed that the grain boundaries were facetted with {210} type habits and extra Ti-O2 bonds were formed along the facetted grain boundaries in the compounds doped with B-site type dopants. Controlling the doping ratio of A- and B-site type dopants severely, coarse-grained sinters whose grain size was about 1 mm could be obtained.

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalKey Engineering Materials
Volume169
Publication statusPublished - Jan 1 1999
Externally publishedYes

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Cations
Grain boundaries
Positive ions
Doping (additives)
Grain growth
Electron energy loss spectroscopy
High resolution electron microscopy
Perovskite

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Grain boundaries in BaTiO3 with a small cation nonstoichiometry. / Yamamoto, T.; Ikuhara, Y.; Hayashi, Katsuro; Sakuma, T.

In: Key Engineering Materials, Vol. 169, 01.01.1999, p. 113-116.

Research output: Contribution to journalArticle

Yamamoto, T, Ikuhara, Y, Hayashi, K & Sakuma, T 1999, 'Grain boundaries in BaTiO3 with a small cation nonstoichiometry', Key Engineering Materials, vol. 169, pp. 113-116.
Yamamoto, T. ; Ikuhara, Y. ; Hayashi, Katsuro ; Sakuma, T. / Grain boundaries in BaTiO3 with a small cation nonstoichiometry. In: Key Engineering Materials. 1999 ; Vol. 169. pp. 113-116.
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