Grain boundary electrical barriers in positive temperature coefficient thermistors

Katsuro Hayashi, Takahisa Yamamoto, Yuichi Ikuhara, Taketo Sakuma

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29 Citations (Scopus)

Abstract

Both current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied in Nb-doped BaTiO3 bicrystals to verify the potential barrier model. The potential barrier of n-i-n structure can reasonably describe the observed data in comparison with that of double Schottky barrier (DSB) model. The difference in the I-V characteristics between the two models is characterized by the appearance of the sub-ohmic behavior with α<1. In the DSB model, the barrier height is kept almost the same because the acceptor states are strongly pinned by the Fermi level. When the acceptor states are completely occupied, the potential barrier will collapse and then the current will increase steeply.

Original languageEnglish
Pages (from-to)2909-2913
Number of pages5
JournalJournal of Applied Physics
Volume86
Issue number5
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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