Grain Boundary Potential Barrier in Barium Titanate PTC Ceramics

Katsuro Hayashi, T. Yamamoto, T. Sakuma

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A numerical calculation based on a drift-diffusion model was made to explain the experimental current-voltage (J-V) characteristics at a single grain boundary in Nb-doped BaTiO3. The temperature dependence of breakdown voltage in J-V characteristics can be reasonably explained by taking into account the change in occupation of interface states. The nonlinearity coefficients in J-V characteristics are interpreted in terms of energetic distribution of interface states and spatial distribution of the states near the grain boundary.

Original languageEnglish
Pages (from-to)199-206
Number of pages8
JournalKey Engineering Materials
Volume157-158
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Factor IX
Barium titanate
Interface states
Grain boundaries
Electric breakdown
Spatial distribution
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemical Engineering (miscellaneous)

Cite this

Grain Boundary Potential Barrier in Barium Titanate PTC Ceramics. / Hayashi, Katsuro; Yamamoto, T.; Sakuma, T.

In: Key Engineering Materials, Vol. 157-158, 1999, p. 199-206.

Research output: Contribution to journalArticle

Hayashi, Katsuro ; Yamamoto, T. ; Sakuma, T. / Grain Boundary Potential Barrier in Barium Titanate PTC Ceramics. In: Key Engineering Materials. 1999 ; Vol. 157-158. pp. 199-206.
@article{c84ed83498f34b3894c3f185ce59b959,
title = "Grain Boundary Potential Barrier in Barium Titanate PTC Ceramics",
abstract = "A numerical calculation based on a drift-diffusion model was made to explain the experimental current-voltage (J-V) characteristics at a single grain boundary in Nb-doped BaTiO3. The temperature dependence of breakdown voltage in J-V characteristics can be reasonably explained by taking into account the change in occupation of interface states. The nonlinearity coefficients in J-V characteristics are interpreted in terms of energetic distribution of interface states and spatial distribution of the states near the grain boundary.",
author = "Katsuro Hayashi and T. Yamamoto and T. Sakuma",
year = "1999",
language = "English",
volume = "157-158",
pages = "199--206",
journal = "Key Engineering Materials",
issn = "1013-9826",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Grain Boundary Potential Barrier in Barium Titanate PTC Ceramics

AU - Hayashi, Katsuro

AU - Yamamoto, T.

AU - Sakuma, T.

PY - 1999

Y1 - 1999

N2 - A numerical calculation based on a drift-diffusion model was made to explain the experimental current-voltage (J-V) characteristics at a single grain boundary in Nb-doped BaTiO3. The temperature dependence of breakdown voltage in J-V characteristics can be reasonably explained by taking into account the change in occupation of interface states. The nonlinearity coefficients in J-V characteristics are interpreted in terms of energetic distribution of interface states and spatial distribution of the states near the grain boundary.

AB - A numerical calculation based on a drift-diffusion model was made to explain the experimental current-voltage (J-V) characteristics at a single grain boundary in Nb-doped BaTiO3. The temperature dependence of breakdown voltage in J-V characteristics can be reasonably explained by taking into account the change in occupation of interface states. The nonlinearity coefficients in J-V characteristics are interpreted in terms of energetic distribution of interface states and spatial distribution of the states near the grain boundary.

UR - http://www.scopus.com/inward/record.url?scp=1842830984&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842830984&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:1842830984

VL - 157-158

SP - 199

EP - 206

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

ER -