A numerical calculation based on a drift-diffusion model was made to explain the experimental current-voltage (J-V) characteristics at a single grain boundary in Nb-doped BaTiO3. The temperature dependence of breakdown voltage in J-V characteristics can be reasonably explained by taking into account the change in occupation of interface states. The nonlinearity coefficients in J-V characteristics are interpreted in terms of energetic distribution of interface states and spatial distribution of the states near the grain boundary.
|Number of pages||8|
|Journal||Key Engineering Materials|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Chemical Engineering (miscellaneous)