Grain filtering in MILC and its impact on performance of n- and p-channel TFTs

Sho Nagata, Gou Nakagawa, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Metal induced lateral crystallization (MILC) using nickel di-silicide catalyst is able to grow poly-Si films having a preferential crystal orientation along surface normal direction. The poly-Si film prepared by MILC, however, contains randomly distributed sub-grain boundaries which may degrade the performance of poly-Si TFT fabricated using the MILC film. We have investigated effects of patterning of the a-Si film prior to MILC on the growth characteristics and TFT performance. When the width of a-Si film pattern was narrowed, grain filtering effect occurred and, as a result, poly-Si islands whose active region for TFT is mostly composed of single oriented crystal were successfully grown. We characterized the film thus prepared by fabricating n and p-channel TFTs. TFTs were fabricated using the standard high temperature process. The results indicated that TFT performance is very much improved in terms of carrier mobility, on-current, and sub-threshold swing. We conclude that the pre-growth pattering of a-Si in MILC is useful technique to improve the performance of MILC TFTs.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Number of pages6
Publication statusPublished - Dec 1 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON


Other2010 IEEE Region 10 Conference, TENCON 2010

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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