Grain growth of β-silicon nitride in RE (RE = Y, Gd, Nd and La) -Mg-Si-O-N melts

Daiji Nakata; Noritaka Saito; Ayumu Umemoto; Kunihiko Nakashima

doi:10.2320/jinstmet.69.719

Grain growth of β-silicon nitride in RE (RE = Y, Gd, Nd and La) -Mg-Si-O-N melts

Daiji Nakata, Noritaka Saito, Ayumu Umemoto, Kunihiko Nakashima

Material process engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Isothermal growth of β-Si ₃N ₄ crystals dispersed in rare-earth (RE = Y, Gd, Nd and La) oxynitride melts (RE-Mg-Si-O-N) was studied during heat treatment at 1773 K under 0.9 MPa of nitrogen pressure for 64 to 512 min. The microstructure of β-Si ₃N ₄ crystals was characterized by electron microscopy. It is found that the rate of α-β transformation increases with decreasing ionic radius of the rare-earth element. Likewise, the radii of rare-earth elements make significant differences in the morphology and mean aspect ratio of β-Si ₃N ₄. Especially, the aspect ratio of β-Si ₃N ₄ crystals with the additive of La ₂O ₃ was found to be much larger than that in oxynitride melts with additives of others.

Original language	English
Pages (from-to)	719-722
Number of pages	4
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	69
Issue number	8
DOIs	https://doi.org/10.2320/jinstmet.69.719
Publication status	Published - Aug 1 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

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title = "Grain growth of β-silicon nitride in RE (RE = Y, Gd, Nd and La) -Mg-Si-O-N melts",

abstract = "Isothermal growth of β-Si 3N 4 crystals dispersed in rare-earth (RE = Y, Gd, Nd and La) oxynitride melts (RE-Mg-Si-O-N) was studied during heat treatment at 1773 K under 0.9 MPa of nitrogen pressure for 64 to 512 min. The microstructure of β-Si 3N 4 crystals was characterized by electron microscopy. It is found that the rate of α-β transformation increases with decreasing ionic radius of the rare-earth element. Likewise, the radii of rare-earth elements make significant differences in the morphology and mean aspect ratio of β-Si 3N 4. Especially, the aspect ratio of β-Si 3N 4 crystals with the additive of La 2O 3 was found to be much larger than that in oxynitride melts with additives of others.",

author = "Daiji Nakata and Noritaka Saito and Ayumu Umemoto and Kunihiko Nakashima",

year = "2005",

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doi = "10.2320/jinstmet.69.719",

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T1 - Grain growth of β-silicon nitride in RE (RE = Y, Gd, Nd and La) -Mg-Si-O-N melts

AU - Nakata, Daiji

AU - Saito, Noritaka

AU - Umemoto, Ayumu

AU - Nakashima, Kunihiko

PY - 2005/8/1

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AB - Isothermal growth of β-Si 3N 4 crystals dispersed in rare-earth (RE = Y, Gd, Nd and La) oxynitride melts (RE-Mg-Si-O-N) was studied during heat treatment at 1773 K under 0.9 MPa of nitrogen pressure for 64 to 512 min. The microstructure of β-Si 3N 4 crystals was characterized by electron microscopy. It is found that the rate of α-β transformation increases with decreasing ionic radius of the rare-earth element. Likewise, the radii of rare-earth elements make significant differences in the morphology and mean aspect ratio of β-Si 3N 4. Especially, the aspect ratio of β-Si 3N 4 crystals with the additive of La 2O 3 was found to be much larger than that in oxynitride melts with additives of others.

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