Abstract
Multicrystalline silicon was grown from seeds with small grains of random orientation and the growth mechanism was studied with respect to grain size, shape, boundary character and orientation. The average grain size perpendicular to growth direction increased steadily initially, became constant and then increased steadily again. Grain size parallel to growth direction increased rapidly with growth due to grain elongation in the growth direction. Grain shape with respect to growth direction changed from spherical to columnar with growth. Initially non-CSL grain boundary fraction was very high but decreased with growth as the Σ3 grain boundary fraction increased. A simple model was proposed to explain the results.
| Original language | English |
|---|---|
| Pages (from-to) | 717-719 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 401 |
| DOIs | |
| Publication status | Published - Sep 1 2014 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal. / Prakash, Ronit R.; Sekiguchi, Takashi; Jiptner, Karolin; Miyamura, Yoshiji; Chen, Jun; Harada, Hirofumi; Kakimoto, Koichi.
In: Journal of Crystal Growth, Vol. 401, 01.09.2014, p. 717-719.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal
AU - Prakash, Ronit R.
AU - Sekiguchi, Takashi
AU - Jiptner, Karolin
AU - Miyamura, Yoshiji
AU - Chen, Jun
AU - Harada, Hirofumi
AU - Kakimoto, Koichi
PY - 2014/9/1
Y1 - 2014/9/1
N2 - Multicrystalline silicon was grown from seeds with small grains of random orientation and the growth mechanism was studied with respect to grain size, shape, boundary character and orientation. The average grain size perpendicular to growth direction increased steadily initially, became constant and then increased steadily again. Grain size parallel to growth direction increased rapidly with growth due to grain elongation in the growth direction. Grain shape with respect to growth direction changed from spherical to columnar with growth. Initially non-CSL grain boundary fraction was very high but decreased with growth as the Σ3 grain boundary fraction increased. A simple model was proposed to explain the results.
AB - Multicrystalline silicon was grown from seeds with small grains of random orientation and the growth mechanism was studied with respect to grain size, shape, boundary character and orientation. The average grain size perpendicular to growth direction increased steadily initially, became constant and then increased steadily again. Grain size parallel to growth direction increased rapidly with growth due to grain elongation in the growth direction. Grain shape with respect to growth direction changed from spherical to columnar with growth. Initially non-CSL grain boundary fraction was very high but decreased with growth as the Σ3 grain boundary fraction increased. A simple model was proposed to explain the results.
UR - http://www.scopus.com/inward/record.url?scp=84906965905&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906965905&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2014.01.067
DO - 10.1016/j.jcrysgro.2014.01.067
M3 - Article
AN - SCOPUS:84906965905
VL - 401
SP - 717
EP - 719
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -