Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner, Yoshiji Miyamura, Jun Chen, Hirofumi Harada, Koichi Kakimoto

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Multicrystalline silicon was grown from seeds with small grains of random orientation and the growth mechanism was studied with respect to grain size, shape, boundary character and orientation. The average grain size perpendicular to growth direction increased steadily initially, became constant and then increased steadily again. Grain size parallel to growth direction increased rapidly with growth due to grain elongation in the growth direction. Grain shape with respect to growth direction changed from spherical to columnar with growth. Initially non-CSL grain boundary fraction was very high but decreased with growth as the Σ3 grain boundary fraction increased. A simple model was proposed to explain the results.

Original languageEnglish
Pages (from-to)717-719
Number of pages3
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - Sep 1 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal'. Together they form a unique fingerprint.

  • Cite this