Grain size effect of cufete2 response to oxygen

Koichi Kishiro, Hisao Kuriyaki, Kazuyoshi Hirakawa

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

The electrical resistivity of the layered semiconductor CuFeTe2 is created in response to oxygen concentration intercalated into the van der Waals gaps. An oxygen gas sensor operating around room temperature has been fabricated using this property. The resistivity response to oxygen has been improved by the use of crystal grains of uniform size. The specimen consisting of grains with diameters of 20-53 ¡im responds to 20% oxygen mixed into nitrogen in 2 min.

Original languageEnglish
Pages (from-to)L674-L675
JournalJapanese Journal of Applied Physics
Volume32
Issue number5 A
DOIs
Publication statusPublished - May 1993

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Grain size effect of cufete2 response to oxygen'. Together they form a unique fingerprint.

Cite this