Graphene-Au nanoparticle based vertical heterostructures: A novel route towards high-ZT Thermoelectric devices

Zhen Yu Juang, Chien Chih Tseng, Yumeng Shi, Wen Pin Hsieh, Sou Ryuzaki, Noboru Saito, Chia En Hsiung, Wen Hao Chang, Yenny Hernandez, Yu Han, Kaoru Tamada, Lain Jong Li

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14 Citations (Scopus)

Abstract

Monolayer graphene exhibits impressive in-plane thermal conductivity (> 1000 W m–1 K–1). However, the out-of-plane thermal transport is limited due to the weak van der Waals interaction, indicating the possibility of constructing a vertical thermoelectric (TE) device. Here, we propose a cross-plane TE device based on the vertical heterostructures of few-layer graphene and gold nanoparticles (AuNPs) on Si substrates, where the incorporation of AuNPs further inhibits the phonon transport and enhances the electrical conductivity along vertical direction. A measurable Seebeck voltage is produced vertically between top graphene and bottom Si when the device is put on a hot surface and the figure of merit ZT is estimated as 1 at room temperature from the transient Harman method. The polarity of the output voltage is determined by the carrier polarity of the substrate. The device concept is also applicable to a flexible and transparent substrate as demonstrated.

Original languageEnglish
Pages (from-to)385-391
Number of pages7
JournalNano Energy
Volume38
DOIs
Publication statusPublished - Aug 2017

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All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)
  • Electrical and Electronic Engineering

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