TY - JOUR
T1 - Graphene-based deep-ultraviolet photodetectors with ultrahigh responsivity using chemical vapor deposition of hexagonal boron nitride to achieve photogating
AU - Fukushima, Shoichiro
AU - Fukamachi, Satoru
AU - Shimatani, Masaaki
AU - Kawahara, Kenji
AU - Ago, Hiroki
AU - Ogawa, Shinpei
N1 - Funding Information:
Acknowledgments. The part of this work performed by Mitsubishi Electric Corp. was supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan. HA acknowledges the JSPS KAKENHI Grant-in-Aid for Transformative Research Areas (A) “Science of 2.5 dimensional materials” (21H05232, 21H05233).
Publisher Copyright:
© 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
PY - 2022/5/1
Y1 - 2022/5/1
N2 - This study presents high-responsivity graphene-based deep-ultraviolet (DUV) photodetectors using chemical vapor deposition (CVD)-hexagonal boron nitride (h-BN) photogating. To improve the DUV photoresponse, h-BN was used as a photosensitizer in graphene field-effect transistors (GFETs). The h-BN photosensitizers were synthesized using CVD and then transferred onto a SiO2/Si substrate. The behavior of h-BN irradiated with DUV light was investigated using cathodoluminescence and UV–VIS reflectance. Under 260 nm light, it exhibited a clear photoresponse with an ultrahigh responsivity of 19600 AW−1, which was 460% higher than a GFET device without h-BN photosensitizers. A noise equivalent power of 3.09×10−13 W/Hz1/2 was achieved.
AB - This study presents high-responsivity graphene-based deep-ultraviolet (DUV) photodetectors using chemical vapor deposition (CVD)-hexagonal boron nitride (h-BN) photogating. To improve the DUV photoresponse, h-BN was used as a photosensitizer in graphene field-effect transistors (GFETs). The h-BN photosensitizers were synthesized using CVD and then transferred onto a SiO2/Si substrate. The behavior of h-BN irradiated with DUV light was investigated using cathodoluminescence and UV–VIS reflectance. Under 260 nm light, it exhibited a clear photoresponse with an ultrahigh responsivity of 19600 AW−1, which was 460% higher than a GFET device without h-BN photosensitizers. A noise equivalent power of 3.09×10−13 W/Hz1/2 was achieved.
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U2 - 10.1364/OME.457545
DO - 10.1364/OME.457545
M3 - Article
AN - SCOPUS:85130631421
SN - 2159-3930
VL - 12
SP - 2090
EP - 2101
JO - Optical Materials Express
JF - Optical Materials Express
IS - 5
ER -