TY - JOUR
T1 - Graphene on SiC(0001) and SiC(0001{combining overline}) surfaces grown via Ni-silicidation reactions
AU - Yoneda, T.
AU - Shibuya, M.
AU - Mitsuhara, K.
AU - Visikovskiy, A.
AU - Hoshino, Y.
AU - Kido, Y.
N1 - Funding Information:
The authors would like to thank Dr. M. Takizawa for his support in the PES experiments. Special thanks are due to our colleagues, T. Nishimura, S. Matsumoto and Y. Matsubara for their kind assistance throughout our experiments. Useful comments of Dr. Y. Maeda on work functions are gratefully acknowledged. This work is partly supported by Ministry of Education, Culture, Sports, Science and Technology , MEXT, 2007–2011.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/8/30
Y1 - 2010/8/30
N2 - This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001{combining overline}) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni2Si(0001)-layer grows epitaxially on SiC(0001{combining overline}) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001{combining overline}) and SiC(0001) surfaces with an areal occupation ratio of ∼ 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001{combining overline}) and SiC(0001), respectively. The dispersion curve of the π band for the double-layer graphite (DG) on the Si-face lies about 1 eV above that of the single-layer graphite (SG) on the C-face around the Γ-point. The work functions of the SG/SiC(0001{combining overline}) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.
AB - This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001{combining overline}) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni2Si(0001)-layer grows epitaxially on SiC(0001{combining overline}) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001{combining overline}) and SiC(0001) surfaces with an areal occupation ratio of ∼ 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001{combining overline}) and SiC(0001), respectively. The dispersion curve of the π band for the double-layer graphite (DG) on the Si-face lies about 1 eV above that of the single-layer graphite (SG) on the C-face around the Γ-point. The work functions of the SG/SiC(0001{combining overline}) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.
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U2 - 10.1016/j.susc.2010.05.019
DO - 10.1016/j.susc.2010.05.019
M3 - Article
AN - SCOPUS:77953873271
VL - 604
SP - 1509
EP - 1515
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 17-18
ER -