Graphene on SiC(0001) and SiC(0001{combining overline}) surfaces grown via Ni-silicidation reactions

T. Yoneda, M. Shibuya, K. Mitsuhara, Anton Visikovskiy, Y. Hoshino, Y. Kido

Research output: Contribution to journalArticle

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Abstract

This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001{combining overline}) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni2Si(0001)-layer grows epitaxially on SiC(0001{combining overline}) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001{combining overline}) and SiC(0001) surfaces with an areal occupation ratio of ∼ 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001{combining overline}) and SiC(0001), respectively. The dispersion curve of the π band for the double-layer graphite (DG) on the Si-face lies about 1 eV above that of the single-layer graphite (SG) on the C-face around the Γ-point. The work functions of the SG/SiC(0001{combining overline}) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.

Original languageEnglish
Pages (from-to)1509-1515
Number of pages7
JournalSurface Science
Volume604
Issue number17-18
DOIs
Publication statusPublished - Aug 30 2010
Externally publishedYes

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Graphene
graphene
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ion scattering
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Temperature
Ions
Substrates
annealing
high resolution
curves
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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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Graphene on SiC(0001) and SiC(0001{combining overline}) surfaces grown via Ni-silicidation reactions. / Yoneda, T.; Shibuya, M.; Mitsuhara, K.; Visikovskiy, Anton; Hoshino, Y.; Kido, Y.

In: Surface Science, Vol. 604, No. 17-18, 30.08.2010, p. 1509-1515.

Research output: Contribution to journalArticle

Yoneda, T. ; Shibuya, M. ; Mitsuhara, K. ; Visikovskiy, Anton ; Hoshino, Y. ; Kido, Y. / Graphene on SiC(0001) and SiC(0001{combining overline}) surfaces grown via Ni-silicidation reactions. In: Surface Science. 2010 ; Vol. 604, No. 17-18. pp. 1509-1515.
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AB - This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001{combining overline}) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni2Si(0001)-layer grows epitaxially on SiC(0001{combining overline}) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001{combining overline}) and SiC(0001) surfaces with an areal occupation ratio of ∼ 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001{combining overline}) and SiC(0001), respectively. The dispersion curve of the π band for the double-layer graphite (DG) on the Si-face lies about 1 eV above that of the single-layer graphite (SG) on the C-face around the Γ-point. The work functions of the SG/SiC(0001{combining overline}) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.

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