Ground state of the Si(0 0 1) surface revisited - Is seeing believing?

T. Uda, H. Shigekawa, Y. Sugawara, S. Mizuno, H. Tochihara, Y. Yamashita, J. Yoshinobu, K. Nakatsuji, H. Kawai, F. Komori

Research output: Contribution to journalReview article

38 Citations (Scopus)

Abstract

The stable structure of clean Si(0 0 1) surface around 100 K is the c(4 × 2) arrangement constructed by buckled dimers. This structure was widely accepted as the ground state in 1990's. The view was challenged at the beginning of 2000's by the observations of a p(2 × 1) structure below 20 K with scanning tunneling microscopy (STM). Recent experimental studies confirm that the dimer is buckled below 30 K. Large tip-surface interaction, and/or tunneling current induced dynamical effect are now experimentally evident in the STM images at low temperatures. Moreover, a current induced structure transformation is discovered below 40 K even in the study by low energy electron diffraction. Dynamical electronic and vibrational effects are theoretically studied for accounting the observation of a p(2 × 1) structure below 20 K.

Original languageEnglish
Pages (from-to)147-162
Number of pages16
JournalProgress in Surface Science
Volume76
Issue number6-8
DOIs
Publication statusPublished - Oct 2004

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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