Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method

Akira Nagaoka, Ryoji Katsube, Shigeru Nakatsuka, Kenji Yoshino, Tomoyasu Taniyama, Hideto Miyake, Koichi Kakimoto, Michael A. Scarpulla, Yoshitaro Nose

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.

Original languageEnglish
Article number22818
Pages (from-to)9-15
Number of pages7
JournalJournal of Crystal Growth
Volume423
DOIs
Publication statusPublished - Aug 1 2015

Fingerprint

heaters
Single crystals
Growth temperature
single crystals
Electron probe microanalysis
Sulfur
X ray powder diffraction
Carrier concentration
Raman spectroscopy
electron probes
microanalysis
Doping (additives)
Thin films
Defects
solutes
Crystals
sulfur
temperature
probes
defects

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Nagaoka, A., Katsube, R., Nakatsuka, S., Yoshino, K., Taniyama, T., Miyake, H., ... Nose, Y. (2015). Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method. Journal of Crystal Growth, 423, 9-15. [22818]. https://doi.org/10.1016/j.jcrysgro.2015.04.012

Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method. / Nagaoka, Akira; Katsube, Ryoji; Nakatsuka, Shigeru; Yoshino, Kenji; Taniyama, Tomoyasu; Miyake, Hideto; Kakimoto, Koichi; Scarpulla, Michael A.; Nose, Yoshitaro.

In: Journal of Crystal Growth, Vol. 423, 22818, 01.08.2015, p. 9-15.

Research output: Contribution to journalArticle

Nagaoka, A, Katsube, R, Nakatsuka, S, Yoshino, K, Taniyama, T, Miyake, H, Kakimoto, K, Scarpulla, MA & Nose, Y 2015, 'Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method', Journal of Crystal Growth, vol. 423, 22818, pp. 9-15. https://doi.org/10.1016/j.jcrysgro.2015.04.012
Nagaoka, Akira ; Katsube, Ryoji ; Nakatsuka, Shigeru ; Yoshino, Kenji ; Taniyama, Tomoyasu ; Miyake, Hideto ; Kakimoto, Koichi ; Scarpulla, Michael A. ; Nose, Yoshitaro. / Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method. In: Journal of Crystal Growth. 2015 ; Vol. 423. pp. 9-15.
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AU - Taniyama, Tomoyasu

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N2 - Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.

AB - Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.

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