TY - JOUR
T1 - Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method
AU - Nagaoka, Akira
AU - Katsube, Ryoji
AU - Nakatsuka, Shigeru
AU - Yoshino, Kenji
AU - Taniyama, Tomoyasu
AU - Miyake, Hideto
AU - Kakimoto, Koichi
AU - Scarpulla, Michael A.
AU - Nose, Yoshitaro
N1 - Funding Information:
The first author was supported by JSPS Research Fellowships for Young Scientists. This work was performed under the Collaborative Research Project of the Materials and Structures Laboratory, Tokyo Institute of Technology. The research at the University of Utah was supported in whole by the U.S. Department of Energy , Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DE-SC0001630 .
PY - 2015/8/1
Y1 - 2015/8/1
N2 - Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.
AB - Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.
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U2 - 10.1016/j.jcrysgro.2015.04.012
DO - 10.1016/j.jcrysgro.2015.04.012
M3 - Article
AN - SCOPUS:84929174193
SN - 0022-0248
VL - 423
SP - 9
EP - 15
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 22818
ER -