Growth and characterization of Cu2ZnSn(SxSe 1-x)4 alloys grown by the melting method

Akira Nagaoka; Kenji Yoshino; Hiroki Taniguchi; Tomoyasu Taniyama; Koichi Kakimoto; Hideto Miyake

doi:10.1016/j.jcrysgro.2013.10.001

Growth and characterization of Cu₂ZnSn(S_xSe _1-x)₄ alloys grown by the melting method

Akira Nagaoka, Kenji Yoshino, Hiroki Taniguchi, Tomoyasu Taniyama, Koichi Kakimoto, Hideto Miyake

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

I₂-II-IV-VI₄ quaternary Cu₂ZnSn(S _xSe_1-x)₄ (CZTSSe) alloys were successfully grown by the melting growth method. The powder X-ray diffraction (XRD) pattern of the CZTSSe alloys showed preferred orientations of (112), (220) and (312) planes, confirming the Kesterite structure. In Raman spectra, the A₁ mode peaks expected for CZTS and CZTSe were observed in all samples, and no secondary phases were observed. The CZTSSe alloys in this study were slightly Cu-poor, Zn-rich and VI-rich, similar to compositions of polycrystalline thin-film materials that have achieved high photovoltaic conversion efficiencies. Single phase and homogeneous CZTSSe alloys were obtained.

Original language	English
Pages (from-to)	204-207
Number of pages	4
Journal	Journal of Crystal Growth
Volume	386
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.10.001
Publication status	Published - Jan 1 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{035ae4f6335c414fb08614a4b7204b94,

title = "Growth and characterization of Cu2ZnSn(SxSe 1-x)4 alloys grown by the melting method",

abstract = "I2-II-IV-VI4 quaternary Cu2ZnSn(S xSe1-x)4 (CZTSSe) alloys were successfully grown by the melting growth method. The powder X-ray diffraction (XRD) pattern of the CZTSSe alloys showed preferred orientations of (112), (220) and (312) planes, confirming the Kesterite structure. In Raman spectra, the A1 mode peaks expected for CZTS and CZTSe were observed in all samples, and no secondary phases were observed. The CZTSSe alloys in this study were slightly Cu-poor, Zn-rich and VI-rich, similar to compositions of polycrystalline thin-film materials that have achieved high photovoltaic conversion efficiencies. Single phase and homogeneous CZTSSe alloys were obtained.",

author = "Akira Nagaoka and Kenji Yoshino and Hiroki Taniguchi and Tomoyasu Taniyama and Koichi Kakimoto and Hideto Miyake",

note = "Funding Information: This work was performed under the Collaborative Research Project of Materials and Structure Laboratory, Tokyo Institute of Technology and Research Institute for Applied Mechanics, Kyushu University, Japan. This work was partially supported by the Japan Science Society and Asahi Glass Foundation . The first author is supported by JSPS Research Fellowships for Young Scientists. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2014",

month = jan,

day = "1",

doi = "10.1016/j.jcrysgro.2013.10.001",

language = "English",

volume = "386",

pages = "204--207",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Growth and characterization of Cu2ZnSn(SxSe 1-x)4 alloys grown by the melting method

AU - Nagaoka, Akira

AU - Yoshino, Kenji

AU - Taniguchi, Hiroki

AU - Taniyama, Tomoyasu

AU - Kakimoto, Koichi

AU - Miyake, Hideto

N1 - Funding Information: This work was performed under the Collaborative Research Project of Materials and Structure Laboratory, Tokyo Institute of Technology and Research Institute for Applied Mechanics, Kyushu University, Japan. This work was partially supported by the Japan Science Society and Asahi Glass Foundation . The first author is supported by JSPS Research Fellowships for Young Scientists. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - I2-II-IV-VI4 quaternary Cu2ZnSn(S xSe1-x)4 (CZTSSe) alloys were successfully grown by the melting growth method. The powder X-ray diffraction (XRD) pattern of the CZTSSe alloys showed preferred orientations of (112), (220) and (312) planes, confirming the Kesterite structure. In Raman spectra, the A1 mode peaks expected for CZTS and CZTSe were observed in all samples, and no secondary phases were observed. The CZTSSe alloys in this study were slightly Cu-poor, Zn-rich and VI-rich, similar to compositions of polycrystalline thin-film materials that have achieved high photovoltaic conversion efficiencies. Single phase and homogeneous CZTSSe alloys were obtained.

AB - I2-II-IV-VI4 quaternary Cu2ZnSn(S xSe1-x)4 (CZTSSe) alloys were successfully grown by the melting growth method. The powder X-ray diffraction (XRD) pattern of the CZTSSe alloys showed preferred orientations of (112), (220) and (312) planes, confirming the Kesterite structure. In Raman spectra, the A1 mode peaks expected for CZTS and CZTSe were observed in all samples, and no secondary phases were observed. The CZTSSe alloys in this study were slightly Cu-poor, Zn-rich and VI-rich, similar to compositions of polycrystalline thin-film materials that have achieved high photovoltaic conversion efficiencies. Single phase and homogeneous CZTSSe alloys were obtained.

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U2 - 10.1016/j.jcrysgro.2013.10.001

DO - 10.1016/j.jcrysgro.2013.10.001

M3 - Article

AN - SCOPUS:84887264038

VL - 386

SP - 204

EP - 207

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

Growth and characterization of Cu₂ZnSn(S_xSe _1-x)₄ alloys grown by the melting method

Abstract

All Science Journal Classification (ASJC) codes

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