Growth and characterization of thick GaN layers with high Fe doping

Y. Kumagai, H. Murakami, Yoshihiro Kangawa, A. Koukitu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Thick Fe-doped GaN layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE). FeCl2 formed by the reaction between ferrocene (Cp2Fe) and HCl was introduced during GaN growth. Resistivity of the GaN layer increased with increasing Cp2Fe input partial pressure. A semi-insulating (SI)-GaN layer exhibiting room-temperature resistivity of 3.0 × 109 Ω cm was successfully prepared by compensating for the residual donors. The crystalline quality of the GaN layer was found to deteriorate with excess Fe doping. These results indicate that control of background donor impurities is critically important to grow high-quality SI-GaN layers. ° 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)2058-2061
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number7
DOIs
Publication statusPublished - Nov 7 2005
Externally publishedYes

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hydrogen chlorides
electrical resistivity
vapor phase epitaxy
partial pressure
impurities
room temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Growth and characterization of thick GaN layers with high Fe doping. / Kumagai, Y.; Murakami, H.; Kangawa, Yoshihiro; Koukitu, A.

In: Physica Status Solidi C: Conferences, Vol. 2, No. 7, 07.11.2005, p. 2058-2061.

Research output: Contribution to journalArticle

Kumagai, Y. ; Murakami, H. ; Kangawa, Yoshihiro ; Koukitu, A. / Growth and characterization of thick GaN layers with high Fe doping. In: Physica Status Solidi C: Conferences. 2005 ; Vol. 2, No. 7. pp. 2058-2061.
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