Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor

Shin Ichi Nishizawa, Michel Pons

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Modeling and simulation of the SiC epitaxial growth, and doping in a horizontal hot-wall reactor from common precursors (SiH4; C 3H8 diluted in H2 for growth; N2 and Al(CH3)3 for n-type and p-type doping) are presented. The growth and doping features of SiC thin layers on both Si-terminated and C-terminated surfaces are analyzed as a function of various inlet source gas conditions, i.e., various C/Si ratios. The role of the actual surface mass fluxes of both Si-containing and C-containing species and their ratio is analyzed and compared to the inlet experimental parameters. It is demonstrated that the doping level resulting from lattice site competition effects can be quantified by the actual C/Si ratio calculated above the growing surface. Moreover, the surface morphology of the epitaxial layer is explained on the basis of the mass fluxes at the growing surface.

Original languageEnglish
Pages (from-to)516-522
Number of pages7
JournalChemical Vapor Deposition
Volume12
Issue number8-9
DOIs
Publication statusPublished - Aug 1 2006
Externally publishedYes

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Chemical vapor deposition
reactors
Doping (additives)
vapor deposition
Mass transfer
Epitaxial layers
Epitaxial growth
Surface morphology
Gases
gases
simulation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

Cite this

Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor. / Nishizawa, Shin Ichi; Pons, Michel.

In: Chemical Vapor Deposition, Vol. 12, No. 8-9, 01.08.2006, p. 516-522.

Research output: Contribution to journalArticle

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