Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

R. S. Kern, K. Järrendahl, S. Tanaka, R. F. Davis

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Gas-source molecular beam epitaxy has been employed to grown thin films of SiC and AlN on vicinal and on-axis 6H-SiC(0001). Growth using the SiH4-C2H4 system resulted in 3C-SiC(111) epilayers under all conditions of reactant gas flow and temperatures. Films of 6H-SiC(OOOl) were deposited on vicinal 6H-SiC(0001) substrates using the SiH4-C2H4-H2 system at deposition temperatures ≥ 1350°C. In situ doping was achieved by intentional introduction of nitrogen and aluminum into the growing crystal. Monocrystalline AlN was deposited using evaporated Al and ECR plasma derived N or NH3. Films <50Å grown on the vicinal substrates had higher defect densities compared to those on the on-axis substrates due to the higher density of inversion boundaries forming at most SiC steps in the former material. Metal/AlN/6H-SiC (0001) thin film heterostructures which had a density of trapped charges as low as of 1 × 1011 cm-2 at room temperature were prepared without post growth treatment. Superior single crystal AlN/SiC heterostructures were achieved when very thin AlN was deposited on the on-axis substrates. Single phase monocrystalline solid solutions of (AlN)x(SiC)1-x were deposited between 0.2≤×≤0.8. A transition from the zincblende to the wurtzite structure was observed at x≈0.25.

Original languageEnglish
Pages (from-to)1282-1288
Number of pages7
JournalDiamond and Related Materials
Volume6
Issue number10
DOIs
Publication statusPublished - Aug 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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