Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

R. S. Kern, K. Järrendahl, Tanaka Satoru, R. F. Davis

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Abstract

Gas-source molecular beam epitaxy has been employed to grown thin films of SiC and AlN on vicinal and on-axis 6H-SiC(0001). Growth using the SiH4-C2H4 system resulted in 3C-SiC(111) epilayers under all conditions of reactant gas flow and temperatures. Films of 6H-SiC(OOOl) were deposited on vicinal 6H-SiC(0001) substrates using the SiH4-C2H4-H2 system at deposition temperatures ≥ 1350°C. In situ doping was achieved by intentional introduction of nitrogen and aluminum into the growing crystal. Monocrystalline AlN was deposited using evaporated Al and ECR plasma derived N or NH3. Films <50Å grown on the vicinal substrates had higher defect densities compared to those on the on-axis substrates due to the higher density of inversion boundaries forming at most SiC steps in the former material. Metal/AlN/6H-SiC (0001) thin film heterostructures which had a density of trapped charges as low as of 1 × 1011 cm-2 at room temperature were prepared without post growth treatment. Superior single crystal AlN/SiC heterostructures were achieved when very thin AlN was deposited on the on-axis substrates. Single phase monocrystalline solid solutions of (AlN)x(SiC)1-x were deposited between 0.2≤×≤0.8. A transition from the zincblende to the wurtzite structure was observed at x≈0.25.

Original languageEnglish
Pages (from-to)1282-1288
Number of pages7
JournalDiamond and Related Materials
Volume6
Issue number10
Publication statusPublished - Aug 1 1997

Fingerprint

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
gases
Thin films
Epilayers
Defect density
zincblende
thin films
gas temperature
Aluminum
Crystal growth
wurtzite
Temperature
gas flow
Flow of gases
Solid solutions
solid solutions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization. / Kern, R. S.; Järrendahl, K.; Satoru, Tanaka; Davis, R. F.

In: Diamond and Related Materials, Vol. 6, No. 10, 01.08.1997, p. 1282-1288.

Research output: Contribution to journalArticle

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