Growth and electronic transport properties of epitaxial graphene on SiC

H. Hibino, S. Tanabe, S. Mizuno, H. Kageshima, H. Hibino, S. Tanabe, S. Mizuno, H. Kageshima

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    34 Citations (Scopus)

    Abstract

    With the aim of developing a single-crystal graphene substrate indispensable to graphene's practical applications, we are investigating the structural and physical properties of graphene epitaxially grown on SiC by thermal decomposition. We grow monolayer and bilayer graphene uniformly on a micrometre scale on the Si face of SiC in an Ar environment and in ultra-high vacuum, respectively. Epitaxial bilayer graphene, even if uniform in thickness, contains two types of domains with different stacking orders. We compare the transport properties of monolayer and bilayer graphene using top-gate Hall bar devices. Quantum Hall effects are observed in monolayer graphene and a band gap is electrically detected in bilayer graphene. The monolayer and bilayer graphene show quite different transport properties, reflecting their electronic structures.

    Original languageEnglish
    Article number154008
    JournalJournal of Physics D: Applied Physics
    Volume45
    Issue number15
    DOIs
    Publication statusPublished - Apr 18 2012

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

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  • Cite this

    Hibino, H., Tanabe, S., Mizuno, S., Kageshima, H., Hibino, H., Tanabe, S., Mizuno, S., & Kageshima, H. (2012). Growth and electronic transport properties of epitaxial graphene on SiC. Journal of Physics D: Applied Physics, 45(15), [154008]. https://doi.org/10.1088/0022-3727/45/15/154008