Growth and evaluation of high quality SiC crystal by sublimation method

Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 × 103 cm-2. The presence of a Pendellösung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
Publication statusPublished - Dec 1 2002
Externally publishedYes

Fingerprint

Sublimation
sublimation
Crystals
evaluation
Topography
crystals
topography
Single crystals
Defects
single crystals
defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., & Arai, K. (2002). Growth and evaluation of high quality SiC crystal by sublimation method. Materials Science Forum, 389-393(1), 87-90.

Growth and evaluation of high quality SiC crystal by sublimation method. / Oyanagi, Naoki; Yamaguchi, Hirotaka; Kato, Tomohisa; Nishizawa, Shinichi; Arai, Kazuo.

In: Materials Science Forum, Vol. 389-393, No. 1, 01.12.2002, p. 87-90.

Research output: Contribution to journalArticle

Oyanagi, N, Yamaguchi, H, Kato, T, Nishizawa, S & Arai, K 2002, 'Growth and evaluation of high quality SiC crystal by sublimation method', Materials Science Forum, vol. 389-393, no. 1, pp. 87-90.
Oyanagi N, Yamaguchi H, Kato T, Nishizawa S, Arai K. Growth and evaluation of high quality SiC crystal by sublimation method. Materials Science Forum. 2002 Dec 1;389-393(1):87-90.
Oyanagi, Naoki ; Yamaguchi, Hirotaka ; Kato, Tomohisa ; Nishizawa, Shinichi ; Arai, Kazuo. / Growth and evaluation of high quality SiC crystal by sublimation method. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 1. pp. 87-90.
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