Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition

K. Teii, J. H.C. Yang, R. Yamao, S. Matsumoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp 2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (∼20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp 2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10 -4 A/cm 2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.

Original languageEnglish
Title of host publicationBoron and Boron Compounds - From Fundamentals to Applications
Pages48-53
Number of pages6
DOIs
Publication statusPublished - Dec 1 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2010Dec 3 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1307
ISSN (Print)0272-9172

Other

Other2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/1012/3/10

Fingerprint

Boron nitride
boron nitrides
Field emission
field emission
Ions
Ultraviolet photoelectron spectroscopy
Cubic boron nitride
Electron affinity
ions
Surface potential
Inductively coupled plasma
Ion bombardment
Fermi level
energy
Chemical vapor deposition
ultraviolet spectroscopy
Current density
electron affinity
Surface roughness
bombardment

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Teii, K., Yang, J. H. C., Yamao, R., & Matsumoto, S. (2011). Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition. In Boron and Boron Compounds - From Fundamentals to Applications (pp. 48-53). (Materials Research Society Symposium Proceedings; Vol. 1307). https://doi.org/10.1557/opl.2011.321

Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition. / Teii, K.; Yang, J. H.C.; Yamao, R.; Matsumoto, S.

Boron and Boron Compounds - From Fundamentals to Applications. 2011. p. 48-53 (Materials Research Society Symposium Proceedings; Vol. 1307).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Teii, K, Yang, JHC, Yamao, R & Matsumoto, S 2011, Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition. in Boron and Boron Compounds - From Fundamentals to Applications. Materials Research Society Symposium Proceedings, vol. 1307, pp. 48-53, 2010 MRS Fall Meeting, Boston, MA, United States, 11/29/10. https://doi.org/10.1557/opl.2011.321
Teii K, Yang JHC, Yamao R, Matsumoto S. Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition. In Boron and Boron Compounds - From Fundamentals to Applications. 2011. p. 48-53. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2011.321
Teii, K. ; Yang, J. H.C. ; Yamao, R. ; Matsumoto, S. / Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition. Boron and Boron Compounds - From Fundamentals to Applications. 2011. pp. 48-53 (Materials Research Society Symposium Proceedings).
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