TY - GEN
T1 - Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition
AU - Teii, K.
AU - Yang, J. H.C.
AU - Yamao, R.
AU - Matsumoto, S.
N1 - Funding Information:
This work was supported in part by Industrial Technology Research Grant Program in 2008 from New Energy and Industrial Technology Development Organization (NEDO) of Japan. K.T. acknowledges funding from the Murata Science Foundation and the Inamori Foundation.
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp 2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (∼20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp 2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10 -4 A/cm 2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.
AB - We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp 2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (∼20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp 2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10 -4 A/cm 2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.
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U2 - 10.1557/opl.2011.321
DO - 10.1557/opl.2011.321
M3 - Conference contribution
AN - SCOPUS:84860180540
SN - 9781618395146
T3 - Materials Research Society Symposium Proceedings
SP - 48
EP - 53
BT - Boron and Boron Compounds - From Fundamentals to Applications
T2 - 2010 MRS Fall Meeting
Y2 - 29 November 2010 through 3 December 2010
ER -