Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition

K. Teii, J. H.C. Yang, R. Yamao, S. Matsumoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp 2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (∼20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp 2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10 -4 A/cm 2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.

Original languageEnglish
Title of host publicationBoron and Boron Compounds - From Fundamentals to Applications
Pages48-53
Number of pages6
DOIs
Publication statusPublished - 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2010Dec 3 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1307
ISSN (Print)0272-9172

Other

Other2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/1012/3/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Growth and field emission properties of boron nitride island films by low-energy ion-assisted deposition'. Together they form a unique fingerprint.

Cite this