Growth and surface structure analysis of a new SiON single layer on SiC(0001)

Ryo Kohmatsu; Takeshi Nakagawa; Seigi Mizuno

doi:10.1016/j.susc.2014.06.007

Growth and surface structure analysis of a new SiON single layer on SiC(0001)

Ryo Kohmatsu, Takeshi Nakagawa, Seigi Mizuno

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new silicon oxynitride layer was formed on a 6H-SiC(0001) surface by a nitrogen oxide treatment. The atomic structure of this single layer on the SiC(0001) substrate was determined by means of low-energy electron diffraction (LEED) analysis. The surface layer has a (3×3) R30° periodicity. Its LEED I(E) spectra are different from those of the previously reported silicon oxynitride layer which has a Si₄O₅N₃ composition [Phys. Rev. Lett. 98 (2007) 136105]. The best-fit structure has a single layer of Si₂ON₃ composition terminated by O bridges. The Si-N layer of the determined structure has the same structure as that in the Si₄O₅N₃ surface. The obtained Si₂O₃ structure would be useful for preparing an ideal SiC-insulator interfaces with a low interfacial density of states.

Original language	English
Pages (from-to)	148-152
Number of pages	5
Journal	Surface Science
Volume	628
DOIs	https://doi.org/10.1016/j.susc.2014.06.007
Publication status	Published - Oct 2014

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2014.06.007

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title = "Growth and surface structure analysis of a new SiON single layer on SiC(0001)",

abstract = "A new silicon oxynitride layer was formed on a 6H-SiC(0001) surface by a nitrogen oxide treatment. The atomic structure of this single layer on the SiC(0001) substrate was determined by means of low-energy electron diffraction (LEED) analysis. The surface layer has a (3×3) R30° periodicity. Its LEED I(E) spectra are different from those of the previously reported silicon oxynitride layer which has a Si4O5N3 composition [Phys. Rev. Lett. 98 (2007) 136105]. The best-fit structure has a single layer of Si2ON3 composition terminated by O bridges. The Si-N layer of the determined structure has the same structure as that in the Si4O5N3 surface. The obtained Si2O3 structure would be useful for preparing an ideal SiC-insulator interfaces with a low interfacial density of states.",

author = "Ryo Kohmatsu and Takeshi Nakagawa and Seigi Mizuno",

note = "Funding Information: This work was partially supported by an Adaptable and Seamless Technology Transfer Program through target-driven R&D, JST ( AS251Z00100K ). The authors would like to thank Enago ( www.enago.jp ) for the English language review.",

year = "2014",

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doi = "10.1016/j.susc.2014.06.007",

language = "English",

volume = "628",

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journal = "Surface Science",

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T1 - Growth and surface structure analysis of a new SiON single layer on SiC(0001)

AU - Kohmatsu, Ryo

AU - Nakagawa, Takeshi

AU - Mizuno, Seigi

N1 - Funding Information: This work was partially supported by an Adaptable and Seamless Technology Transfer Program through target-driven R&D, JST ( AS251Z00100K ). The authors would like to thank Enago ( www.enago.jp ) for the English language review.

PY - 2014/10

Y1 - 2014/10

N2 - A new silicon oxynitride layer was formed on a 6H-SiC(0001) surface by a nitrogen oxide treatment. The atomic structure of this single layer on the SiC(0001) substrate was determined by means of low-energy electron diffraction (LEED) analysis. The surface layer has a (3×3) R30° periodicity. Its LEED I(E) spectra are different from those of the previously reported silicon oxynitride layer which has a Si4O5N3 composition [Phys. Rev. Lett. 98 (2007) 136105]. The best-fit structure has a single layer of Si2ON3 composition terminated by O bridges. The Si-N layer of the determined structure has the same structure as that in the Si4O5N3 surface. The obtained Si2O3 structure would be useful for preparing an ideal SiC-insulator interfaces with a low interfacial density of states.

AB - A new silicon oxynitride layer was formed on a 6H-SiC(0001) surface by a nitrogen oxide treatment. The atomic structure of this single layer on the SiC(0001) substrate was determined by means of low-energy electron diffraction (LEED) analysis. The surface layer has a (3×3) R30° periodicity. Its LEED I(E) spectra are different from those of the previously reported silicon oxynitride layer which has a Si4O5N3 composition [Phys. Rev. Lett. 98 (2007) 136105]. The best-fit structure has a single layer of Si2ON3 composition terminated by O bridges. The Si-N layer of the determined structure has the same structure as that in the Si4O5N3 surface. The obtained Si2O3 structure would be useful for preparing an ideal SiC-insulator interfaces with a low interfacial density of states.

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U2 - 10.1016/j.susc.2014.06.007

DO - 10.1016/j.susc.2014.06.007

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SN - 0039-6028

VL - 628

SP - 148

EP - 152

JO - Surface Science

JF - Surface Science

ER -

Growth and surface structure analysis of a new SiON single layer on SiC(0001)

Abstract

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