Growth atmosphere dependence of transport properties of NiO epitaxial thin films

Keisuke Oka, Takeshi Yanagida, Kazuki Nagashima, Hidekazu Tanaka, Tomoji Kawai

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Recent possible applications in nonvolatile resistive switching memory devices renewed the interests in the transport properties of NiO. The variation on the conductivities of NiO films was reported to strongly affect the resistive switching phenomena. The conduction mechanism of NiO has been interpreted in terms of the bulk p -type conduction mechanism via Ni deficiencies (Ni1-δ O). Here we investigate the growth atmosphere dependence on the transport properties of NiO thin films epitaxially grown on MgO (001) substrate. The conductivities of NiO thin films showed completely an opposite tendency compared to the bulk p -type conduction mechanism. Microstructural analysis demonstrates that the conductivity of low temperature grown NiO thin films strongly correlates with tailing the band edge via the deterioration of entire film crystallinity rather than the grain boundaries including second phases.

Original languageEnglish
Article number013711
JournalJournal of Applied Physics
Volume104
Issue number1
DOIs
Publication statusPublished - Jul 28 2008

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transport properties
conduction
atmospheres
conductivity
thin films
deterioration
crystallinity
tendencies
grain boundaries

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Growth atmosphere dependence of transport properties of NiO epitaxial thin films. / Oka, Keisuke; Yanagida, Takeshi; Nagashima, Kazuki; Tanaka, Hidekazu; Kawai, Tomoji.

In: Journal of Applied Physics, Vol. 104, No. 1, 013711, 28.07.2008.

Research output: Contribution to journalArticle

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