Abstract
Recent possible applications in nonvolatile resistive switching memory devices renewed the interests in the transport properties of NiO. The variation on the conductivities of NiO films was reported to strongly affect the resistive switching phenomena. The conduction mechanism of NiO has been interpreted in terms of the bulk p -type conduction mechanism via Ni deficiencies (Ni1-δ O). Here we investigate the growth atmosphere dependence on the transport properties of NiO thin films epitaxially grown on MgO (001) substrate. The conductivities of NiO thin films showed completely an opposite tendency compared to the bulk p -type conduction mechanism. Microstructural analysis demonstrates that the conductivity of low temperature grown NiO thin films strongly correlates with tailing the band edge via the deterioration of entire film crystallinity rather than the grain boundaries including second phases.
| Original language | English |
|---|---|
| Article number | 013711 |
| Journal | Journal of Applied Physics |
| Volume | 104 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jul 28 2008 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Growth atmosphere dependence of transport properties of NiO epitaxial thin films. / Oka, Keisuke; Yanagida, Takeshi; Nagashima, Kazuki; Tanaka, Hidekazu; Kawai, Tomoji.
In: Journal of Applied Physics, Vol. 104, No. 1, 013711, 28.07.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth atmosphere dependence of transport properties of NiO epitaxial thin films
AU - Oka, Keisuke
AU - Yanagida, Takeshi
AU - Nagashima, Kazuki
AU - Tanaka, Hidekazu
AU - Kawai, Tomoji
PY - 2008/7/28
Y1 - 2008/7/28
N2 - Recent possible applications in nonvolatile resistive switching memory devices renewed the interests in the transport properties of NiO. The variation on the conductivities of NiO films was reported to strongly affect the resistive switching phenomena. The conduction mechanism of NiO has been interpreted in terms of the bulk p -type conduction mechanism via Ni deficiencies (Ni1-δ O). Here we investigate the growth atmosphere dependence on the transport properties of NiO thin films epitaxially grown on MgO (001) substrate. The conductivities of NiO thin films showed completely an opposite tendency compared to the bulk p -type conduction mechanism. Microstructural analysis demonstrates that the conductivity of low temperature grown NiO thin films strongly correlates with tailing the band edge via the deterioration of entire film crystallinity rather than the grain boundaries including second phases.
AB - Recent possible applications in nonvolatile resistive switching memory devices renewed the interests in the transport properties of NiO. The variation on the conductivities of NiO films was reported to strongly affect the resistive switching phenomena. The conduction mechanism of NiO has been interpreted in terms of the bulk p -type conduction mechanism via Ni deficiencies (Ni1-δ O). Here we investigate the growth atmosphere dependence on the transport properties of NiO thin films epitaxially grown on MgO (001) substrate. The conductivities of NiO thin films showed completely an opposite tendency compared to the bulk p -type conduction mechanism. Microstructural analysis demonstrates that the conductivity of low temperature grown NiO thin films strongly correlates with tailing the band edge via the deterioration of entire film crystallinity rather than the grain boundaries including second phases.
UR - http://www.scopus.com/inward/record.url?scp=47749115347&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=47749115347&partnerID=8YFLogxK
U2 - 10.1063/1.2952012
DO - 10.1063/1.2952012
M3 - Article
AN - SCOPUS:47749115347
VL - 104
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 013711
ER -