Growth conditions of buffer layers on textured NiW substrates by pulsed-laser deposition

A. Nakai, J. Matsuda, Y. Sutoh, Y. Kitoh, M. Yoshizumi, T. Izumi, Y. Shiohara, M. Mimura

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Abstract

YBCO coated conductor consists of several layers which have many roles such as Ni diffusion barrier, lattices matching and texturing upper layers. Texturing by the ion-beam assisted deposition method (IBAD) increases the total cost significantly, therefore, textured NiW substrates are expected to be used in the near future because of its low cost. However, an appropriate architecture and/or conditions to deposit buffer layers and the YBCO layer on textured NiW substrates are different from those on IBAD substrates. Growth conditions of the buffer layers on textured NiW substrates were studied in this work by using pulsed-laser deposition (PLD) or electron beam evaporation (E-Beam). Several oxide buffer layers are used for making coated conductors. Since the grain size of NiW is large and its surface is oxidized easily, we investigated the influence of growth conditions of the seed layers on upper layers. Many parameters affect the degree of in-plane grain alignment (Δφ{symbol}), for example, distance between the target and the substrate. Δφ{symbol} value of CeO2 seed layers on NiW deposited by PLD were not improved although those deposited by E-Beam were improved. YBCO films were deposited on the buffer layers by metal organic deposition using trifluoroacetates (TFA-MOD) and its critical current (Ic) of 310 A/cm at 77 K, 0 T was obtained on Δφ{symbol} of 5.4° of the CeO2 seed layer.

Original languageEnglish
Pages (from-to)615-618
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume463-465
Issue numberSUPPL.
DOIs
Publication statusPublished - Oct 1 2007

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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