Growth control of dry yeast using scalable atmospheric-pressure dielectric barrier discharge plasma irradiation

Satoshi Kitazaki; Kazunori Koga; Masaharu Shiratani; Nobuya Hayashi

doi:10.1143/JJAP.51.11PJ02

Growth control of dry yeast using scalable atmospheric-pressure dielectric barrier discharge plasma irradiation

Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

Electronic Devices

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We have investigated the effects of plasma irradiation on the growth of dry yeast (Saccharomyces cerevisiae) using a scalable atmosphericpressure dielectric barrier discharge (DBD) device. NO of 380 ppm, NO₂ of 10 ppm and O₃ of 560 ppm were detected 1mm below the discharges, which were produced by the DBD plasmas. DBD plasma irradiation of 10 to 100 s enhances the growth of yeast in the lag phase, whereas that of 120 and 150 s suppresses the growth. O₃, NO₂ , photons, and heat generated by the plasma irradiation are not responsible for the growth enhancement of the dry yeast. Plasma etching has little effect on the growth of dry yeast cells. NO plays a key role in the growth enhancement of dry yeast cells. # 2012 The Japan Society of Applied Physics.

Original language	English
Article number	11PJ02
Journal	Japanese journal of applied physics
Volume	51
Issue number	11 PART2
DOIs	https://doi.org/10.1143/JJAP.51.11PJ02
Publication status	Published - Nov 2012

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.51.11PJ02

Fingerprint Dive into the research topics of 'Growth control of dry yeast using scalable atmospheric-pressure dielectric barrier discharge plasma irradiation'. Together they form a unique fingerprint.

Cite this

@article{f2ceae7384f24535bb07a6cd0bf4515d,

title = "Growth control of dry yeast using scalable atmospheric-pressure dielectric barrier discharge plasma irradiation",

abstract = "We have investigated the effects of plasma irradiation on the growth of dry yeast (Saccharomyces cerevisiae) using a scalable atmosphericpressure dielectric barrier discharge (DBD) device. NO of 380 ppm, NO2 of 10 ppm and O3 of 560 ppm were detected 1mm below the discharges, which were produced by the DBD plasmas. DBD plasma irradiation of 10 to 100 s enhances the growth of yeast in the lag phase, whereas that of 120 and 150 s suppresses the growth. O3, NO2 , photons, and heat generated by the plasma irradiation are not responsible for the growth enhancement of the dry yeast. Plasma etching has little effect on the growth of dry yeast cells. NO plays a key role in the growth enhancement of dry yeast cells. # 2012 The Japan Society of Applied Physics.",

author = "Satoshi Kitazaki and Kazunori Koga and Masaharu Shiratani and Nobuya Hayashi",

year = "2012",

month = nov,

doi = "10.1143/JJAP.51.11PJ02",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "11 PART2",

}

TY - JOUR

T1 - Growth control of dry yeast using scalable atmospheric-pressure dielectric barrier discharge plasma irradiation

AU - Kitazaki, Satoshi

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Hayashi, Nobuya

PY - 2012/11

Y1 - 2012/11

N2 - We have investigated the effects of plasma irradiation on the growth of dry yeast (Saccharomyces cerevisiae) using a scalable atmosphericpressure dielectric barrier discharge (DBD) device. NO of 380 ppm, NO2 of 10 ppm and O3 of 560 ppm were detected 1mm below the discharges, which were produced by the DBD plasmas. DBD plasma irradiation of 10 to 100 s enhances the growth of yeast in the lag phase, whereas that of 120 and 150 s suppresses the growth. O3, NO2 , photons, and heat generated by the plasma irradiation are not responsible for the growth enhancement of the dry yeast. Plasma etching has little effect on the growth of dry yeast cells. NO plays a key role in the growth enhancement of dry yeast cells. # 2012 The Japan Society of Applied Physics.

AB - We have investigated the effects of plasma irradiation on the growth of dry yeast (Saccharomyces cerevisiae) using a scalable atmosphericpressure dielectric barrier discharge (DBD) device. NO of 380 ppm, NO2 of 10 ppm and O3 of 560 ppm were detected 1mm below the discharges, which were produced by the DBD plasmas. DBD plasma irradiation of 10 to 100 s enhances the growth of yeast in the lag phase, whereas that of 120 and 150 s suppresses the growth. O3, NO2 , photons, and heat generated by the plasma irradiation are not responsible for the growth enhancement of the dry yeast. Plasma etching has little effect on the growth of dry yeast cells. NO plays a key role in the growth enhancement of dry yeast cells. # 2012 The Japan Society of Applied Physics.

UR - http://www.scopus.com/inward/record.url?scp=84871363238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871363238&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.11PJ02

DO - 10.1143/JJAP.51.11PJ02

M3 - Article

AN - SCOPUS:84871363238

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 11 PART2

M1 - 11PJ02

ER -