TY - JOUR
T1 - Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth
AU - Ohta, Y.
AU - Tanaka, T.
AU - Toko, K.
AU - Sadoh, T.
AU - Miyao, M.
N1 - Funding Information:
A part of this work was supported by Semiconductor Technology Academic Research Center (STARC) and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, and Technology in Japan.
PY - 2011/6
Y1 - 2011/6
N2 - The lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated as a function of the Si-seed orientation and the growth direction. Giant single-crystalline GOI structures with ∼200 μm length are obtained using Si(1 0 0), (1 1 0), and (1 1 1) seeds. The very long growth is explained on the basis of the solidification temperature gradient due to Si-Ge mixing around the seeding area and the thermal gradient due to the latent heat around the solid/liquid interface at the growth front. In addition, growth with rotating crystal orientations is observed for samples with several growth directions. The rotating growth is explained on the basis of the bonding strength between lattice planes at the growth front. This rotating growth does not occur in any direction for (1 0 0) orientated seeds. Based on this finding the mesh-patterned GOI growth with a large area (250 μm × 500 μm) is demonstrated.
AB - The lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated as a function of the Si-seed orientation and the growth direction. Giant single-crystalline GOI structures with ∼200 μm length are obtained using Si(1 0 0), (1 1 0), and (1 1 1) seeds. The very long growth is explained on the basis of the solidification temperature gradient due to Si-Ge mixing around the seeding area and the thermal gradient due to the latent heat around the solid/liquid interface at the growth front. In addition, growth with rotating crystal orientations is observed for samples with several growth directions. The rotating growth is explained on the basis of the bonding strength between lattice planes at the growth front. This rotating growth does not occur in any direction for (1 0 0) orientated seeds. Based on this finding the mesh-patterned GOI growth with a large area (250 μm × 500 μm) is demonstrated.
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U2 - 10.1016/j.sse.2011.01.039
DO - 10.1016/j.sse.2011.01.039
M3 - Article
AN - SCOPUS:79955522061
SN - 0038-1101
VL - 60
SP - 18
EP - 21
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 1
ER -