Growth-direction dependent rapid-melting-growth of Ge-on-Insulator (GOI) and its application to Ge mesh-growth

H. Yokoyama, Y. Ohta, K. Toko, T. Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single crystal Ge-on-insulator (GOI) structures with various crystal orientations are necessary for realization of advanced high-speed and multi-functional devices. SiGe mixing triggered rapid-melting-growth of GOI is investigated as a function of seed-orientations and growth-directions. Single crystal growth of (100)-Ge strips is possible for all growth directions using (100)-oriented Si-seeds. However, rotational-growth is observed for some directions when Si-seeds with (110) and (111) orientations are employed. Such rotational-growth is completely suppressed by selecting the growth-directions deviating from the 〈111〉 direction by more than 35°. Based on this finding, growth of large mesh-patterned Ge layers with (100), (110), and (111) orientations are demonstrated.

Original languageEnglish
Title of host publicationAdvanced Semiconductor-on-Insulator Technology and Related Physics 15
Pages55-60
Number of pages6
Edition5
DOIs
Publication statusPublished - Aug 2 2011
Event15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Publication series

NameECS Transactions
Number5
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Growth-direction dependent rapid-melting-growth of Ge-on-Insulator (GOI) and its application to Ge mesh-growth'. Together they form a unique fingerprint.

Cite this