Growth enhancement of radish sprouts induced by low pressure o 2 radio frequency discharge plasma irradiation

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)

Abstract

We studied growth enhancement of radish sprouts (Raphanus sativus L.) induced by low pressure O 2 radio frequency (RF) discharge plasma irradiation. The average length of radish sprouts cultivated for 7 days after O 2 plasma irradiation is 30-60% greater than that without irradiation. O 2 plasma irradiation does not affect seed germination. The experimental results reveal that oxygen related radicals strongly enhance growth, whereas ions and photons do not.

Original languageEnglish
Article number01AE01
JournalJapanese journal of applied physics
Volume51
Issue number1 PART 2
DOIs
Publication statusPublished - Jan 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Growth enhancement of radish sprouts induced by low pressure o <sub>2</sub> radio frequency discharge plasma irradiation'. Together they form a unique fingerprint.

Cite this