Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance

Junli Wang, Liwei Zhao, Nam Hoai Luu, Kazuya Makiyama, Dong Wang, Hiroshi Nakashima

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Abstract

The growth characteristics and electrical properties of a thin Si oxide film formed by Kr and O2 mixed ECR plasma irradiation at a low temperature of 130°C have been investigated. The Kr gas is better than Ar for diluting the O2 plasma for Si oxidation according to the current-voltage characteristics of the Si oxide film. It is found that the surface-reaction-limited growth dominates the initial stage of oxidation while the diffusion-limited growth dominates the thicker region. A large positive bias and a small O2 gas flow rate lead to the decrease in the leakage current and the increase in the breakdown electric field of the Si oxide film, implying that the oxidation in the initial stage is essential for obtaining good electrical properties. Under the optimum condition, the as-grown Si oxide film shows a breakdown electric field of 10-12 MV/cm, and for more than 80% of the samples a leakage current density at an electric field of 5 MV/cm distributes in the range of 10-9 or 10-8 A/cm 2.

Original languageEnglish
Pages (from-to)6496-6501
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
Publication statusPublished - Oct 1 2003

Fingerprint

Krypton
Electron cyclotron resonance
Growth kinetics
oxygen plasma
krypton
electron cyclotron resonance
Oxide films
oxide films
Electric properties
electrical properties
Plasmas
Oxygen
Electric fields
kinetics
Leakage currents
Oxidation
oxidation
electric fields
leakage
breakdown

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance",
abstract = "The growth characteristics and electrical properties of a thin Si oxide film formed by Kr and O2 mixed ECR plasma irradiation at a low temperature of 130°C have been investigated. The Kr gas is better than Ar for diluting the O2 plasma for Si oxidation according to the current-voltage characteristics of the Si oxide film. It is found that the surface-reaction-limited growth dominates the initial stage of oxidation while the diffusion-limited growth dominates the thicker region. A large positive bias and a small O2 gas flow rate lead to the decrease in the leakage current and the increase in the breakdown electric field of the Si oxide film, implying that the oxidation in the initial stage is essential for obtaining good electrical properties. Under the optimum condition, the as-grown Si oxide film shows a breakdown electric field of 10-12 MV/cm, and for more than 80{\%} of the samples a leakage current density at an electric field of 5 MV/cm distributes in the range of 10-9 or 10-8 A/cm 2.",
author = "Junli Wang and Liwei Zhao and Luu, {Nam Hoai} and Kazuya Makiyama and Dong Wang and Hiroshi Nakashima",
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T1 - Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance

AU - Wang, Junli

AU - Zhao, Liwei

AU - Luu, Nam Hoai

AU - Makiyama, Kazuya

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The growth characteristics and electrical properties of a thin Si oxide film formed by Kr and O2 mixed ECR plasma irradiation at a low temperature of 130°C have been investigated. The Kr gas is better than Ar for diluting the O2 plasma for Si oxidation according to the current-voltage characteristics of the Si oxide film. It is found that the surface-reaction-limited growth dominates the initial stage of oxidation while the diffusion-limited growth dominates the thicker region. A large positive bias and a small O2 gas flow rate lead to the decrease in the leakage current and the increase in the breakdown electric field of the Si oxide film, implying that the oxidation in the initial stage is essential for obtaining good electrical properties. Under the optimum condition, the as-grown Si oxide film shows a breakdown electric field of 10-12 MV/cm, and for more than 80% of the samples a leakage current density at an electric field of 5 MV/cm distributes in the range of 10-9 or 10-8 A/cm 2.

AB - The growth characteristics and electrical properties of a thin Si oxide film formed by Kr and O2 mixed ECR plasma irradiation at a low temperature of 130°C have been investigated. The Kr gas is better than Ar for diluting the O2 plasma for Si oxidation according to the current-voltage characteristics of the Si oxide film. It is found that the surface-reaction-limited growth dominates the initial stage of oxidation while the diffusion-limited growth dominates the thicker region. A large positive bias and a small O2 gas flow rate lead to the decrease in the leakage current and the increase in the breakdown electric field of the Si oxide film, implying that the oxidation in the initial stage is essential for obtaining good electrical properties. Under the optimum condition, the as-grown Si oxide film shows a breakdown electric field of 10-12 MV/cm, and for more than 80% of the samples a leakage current density at an electric field of 5 MV/cm distributes in the range of 10-9 or 10-8 A/cm 2.

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