Growth kinetics of CoSi formed by ion beam irradiation at room temperature

A. Baba, H. Aramaki, Taizoh Sadoh, T. Tsurushima

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Growth kinetics of cobalt suicide layers formed by ion beam irradiation was investigated at a temperature between room temperature and 100 °C. The CoSi phase was identified by x-ray diffraction of Co/Si samples irradiated with 25 keV argon ions to a dose of 2.0×1015 cm-2. The number of intermixed silicon atoms in the CoSi layers was evaluated as a function of dose, dose rate, and nuclear energy deposition rate at the Co/Si interface for samples irradiated with 40 keV focused silicon ion beams. The growth is shown to be diffusion-limited and attributed to radiation-enhanced diffusion with an activation energy of 0.16 eV. The number of intermixed silicon atoms is approximately proportional to the nuclear energy deposition rate at the initial Co/Si interface, while it is independent of dose rate, which shows that the CoSi phase is formed without contribution of the sample heating caused by irradiation.

Original languageEnglish
Pages (from-to)5480-5483
Number of pages4
JournalJournal of Applied Physics
Volume82
Issue number11
DOIs
Publication statusPublished - Dec 1 1997

Fingerprint

ion beams
dosage
irradiation
kinetics
room temperature
nuclear energy
silicon
atoms
x ray diffraction
cobalt
argon
activation energy
heating
radiation
ions
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Growth kinetics of CoSi formed by ion beam irradiation at room temperature. / Baba, A.; Aramaki, H.; Sadoh, Taizoh; Tsurushima, T.

In: Journal of Applied Physics, Vol. 82, No. 11, 01.12.1997, p. 5480-5483.

Research output: Contribution to journalArticle

Baba, A. ; Aramaki, H. ; Sadoh, Taizoh ; Tsurushima, T. / Growth kinetics of CoSi formed by ion beam irradiation at room temperature. In: Journal of Applied Physics. 1997 ; Vol. 82, No. 11. pp. 5480-5483.
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