TY - JOUR
T1 - Growth mechanism of ZnO deposited by nitrogen mediated crystallization
AU - Suhariadi, Iping
AU - Shiratani, Masaharu
AU - Itagaki, Naho
N1 - Funding Information:
This research was partly supported by Japan Science and Technology Agency, Precursory Research for Embryonic Science and Technology (JST, PRESTO), Grants-in-Aid for Scientific Research from Japan Society for the Promotion of Science (JSPS), and Kyushu University Foundation. I. Suhariadi would like to thank the Japan International Cooperation Agency (JICA) for the support.
PY - 2014/9
Y1 - 2014/9
N2 - We investigate the growth mechanism of ZnO deposited by a nitrogen mediated crystallization (NMC) method. NMC is a method in which nitrogen is used to control nucleation via a nitrogen adsorption-desorption behavior. The growth of NMC-ZnO is classified into three stages, that is, the pre-nucleation stage, nucleation and grain growth stage for 4-30 nm in thickness, and coalescence stage for 31-100 nm in thickness. NMC-ZnO nucleation takes place in a very short period compared to that for conventional ZnO. Hence, NMC-ZnO has a uniform grain size distribution, flat surface with less spiky grains, and a longer lateral correlation length of the surface, leading to a larger grain size than in conventional ZnO. Utilizing this NMC-ZnO as a buffer layer, low resistive aluminum doped zinc oxide ZnO:Al (AZO) films are obtained at the buffer layer film thickness ranging from 4 to 30 nm. The lowest resistivity is 3.4 × 10-4Ωcm for 90 nm thick AZO deposited on NMC-ZnO buffer layers of 10 and 30 nm in thickness.
AB - We investigate the growth mechanism of ZnO deposited by a nitrogen mediated crystallization (NMC) method. NMC is a method in which nitrogen is used to control nucleation via a nitrogen adsorption-desorption behavior. The growth of NMC-ZnO is classified into three stages, that is, the pre-nucleation stage, nucleation and grain growth stage for 4-30 nm in thickness, and coalescence stage for 31-100 nm in thickness. NMC-ZnO nucleation takes place in a very short period compared to that for conventional ZnO. Hence, NMC-ZnO has a uniform grain size distribution, flat surface with less spiky grains, and a longer lateral correlation length of the surface, leading to a larger grain size than in conventional ZnO. Utilizing this NMC-ZnO as a buffer layer, low resistive aluminum doped zinc oxide ZnO:Al (AZO) films are obtained at the buffer layer film thickness ranging from 4 to 30 nm. The lowest resistivity is 3.4 × 10-4Ωcm for 90 nm thick AZO deposited on NMC-ZnO buffer layers of 10 and 30 nm in thickness.
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U2 - 10.1088/2053-1591/1/3/036403
DO - 10.1088/2053-1591/1/3/036403
M3 - Article
AN - SCOPUS:84953237030
VL - 1
JO - Materials Research Express
JF - Materials Research Express
SN - 2053-1591
IS - 3
M1 - 036403
ER -