Abstract
A new model is developed for numerical analysis of the entire growth process of binary alloy nanopowders in thermal plasma synthesis. The model can express any nanopowder profile in the particle size-composition distribution (PSCD). Moreover, its numerical solution algorithm is arithmetic and straightforward so that the model is easy to use. By virtue of these features, the model effectively simulates the collective and simultaneous combined process of binary homogeneous nucleation, binary heterogeneous cocondensation, and coagulation among nanoparticles. The effect of the freezing point depression due to nanoscale particle diameters is also considered in the model. In this study, the metal-silicon systems are particularly chosen as representative binary systems involving cocondensation processes. In consequence, the numerical calculation with the present model reveals the growth mechanisms of the Mo-Si and Ti-Si nanopowders by exhibiting their PSCD evolutions. The difference of the materials' saturation pressures strongly affects the growth behaviors and mature states of the binary alloy nanopowder.
| Original language | English |
|---|---|
| Article number | 043306 |
| Journal | Journal of Applied Physics |
| Volume | 108 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Aug 15 2010 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Growth model of binary alloy nanopowders for thermal plasma synthesis. / Shigeta, Masaya; Watanabe, Takayuki.
In: Journal of Applied Physics, Vol. 108, No. 4, 043306, 15.08.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth model of binary alloy nanopowders for thermal plasma synthesis
AU - Shigeta, Masaya
AU - Watanabe, Takayuki
PY - 2010/8/15
Y1 - 2010/8/15
N2 - A new model is developed for numerical analysis of the entire growth process of binary alloy nanopowders in thermal plasma synthesis. The model can express any nanopowder profile in the particle size-composition distribution (PSCD). Moreover, its numerical solution algorithm is arithmetic and straightforward so that the model is easy to use. By virtue of these features, the model effectively simulates the collective and simultaneous combined process of binary homogeneous nucleation, binary heterogeneous cocondensation, and coagulation among nanoparticles. The effect of the freezing point depression due to nanoscale particle diameters is also considered in the model. In this study, the metal-silicon systems are particularly chosen as representative binary systems involving cocondensation processes. In consequence, the numerical calculation with the present model reveals the growth mechanisms of the Mo-Si and Ti-Si nanopowders by exhibiting their PSCD evolutions. The difference of the materials' saturation pressures strongly affects the growth behaviors and mature states of the binary alloy nanopowder.
AB - A new model is developed for numerical analysis of the entire growth process of binary alloy nanopowders in thermal plasma synthesis. The model can express any nanopowder profile in the particle size-composition distribution (PSCD). Moreover, its numerical solution algorithm is arithmetic and straightforward so that the model is easy to use. By virtue of these features, the model effectively simulates the collective and simultaneous combined process of binary homogeneous nucleation, binary heterogeneous cocondensation, and coagulation among nanoparticles. The effect of the freezing point depression due to nanoscale particle diameters is also considered in the model. In this study, the metal-silicon systems are particularly chosen as representative binary systems involving cocondensation processes. In consequence, the numerical calculation with the present model reveals the growth mechanisms of the Mo-Si and Ti-Si nanopowders by exhibiting their PSCD evolutions. The difference of the materials' saturation pressures strongly affects the growth behaviors and mature states of the binary alloy nanopowder.
UR - http://www.scopus.com/inward/record.url?scp=77956304548&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956304548&partnerID=8YFLogxK
U2 - 10.1063/1.3464228
DO - 10.1063/1.3464228
M3 - Article
AN - SCOPUS:77956304548
VL - 108
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 043306
ER -