Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets

Y. Ikoma, T. Endo, T. Tada, F. Watanabe, T. Motooka

Research output: Contribution to journalConference articlepeer-review

Abstract

We have investigated growths of 3C-SiC/Si multilayer heterostructures on Si(100) by supersonic free jet CVD. CH3SiH3 and Si3H8 gas jets were used for 3C-SiC and Si layer growth, respectively. The crystal quality of Si layers on 3C-SiC/Si(100) was found to strongly depend on the 3C-SiC surface roughness. Polycrystalline Si was grown on rough 3C-SiC layers with a thickness of 9 nm, while epitaxial Si was grown by using ultrathin (≈3 nm) 3C-SiC layers with smooth surfaces. Epitaxial 3C-SiC/Si/3C-SiC/Si(100) heterostructures were successfully obtained on ultrathin 3C-SiC/Si(100).

Original languageEnglish
Pages (from-to)265-268
JournalMaterials Science Forum
Volume338-342
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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