Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets

Yoshifumi Ikoma, T. Endo, T. Tada, F. Watanabe, T. Motooka

Research output: Contribution to journalArticle

Abstract

We have investigated growths of 3C-SiC/Si multilayer heterostructures on Si(100) by supersonic free jet CVD. CH3SiH3 and Si3H8 gas jets were used for 3C-SiC and Si layer growth, respectively. The crystal quality of Si layers on 3C-SiC/Si(100) was found to strongly depend on the 3C-SiC surface roughness. Polycrystalline Si was grown on rough 3C-SiC layers with a thickness of 9 nm, while epitaxial Si was grown by using ultrathin (≈3 nm) 3C-SiC layers with smooth surfaces. Epitaxial 3C-SiC/Si/3C-SiC/Si(100) heterostructures were successfully obtained on ultrathin 3C-SiC/Si(100).

Original languageEnglish
Pages (from-to)265-268
JournalMaterials Science Forum
Volume338-342
Publication statusPublished - 2000

Fingerprint

free jets
Heterojunctions
Multilayers
Chemical vapor deposition
Gases
Surface roughness
Crystals
gas jets
surface roughness
vapor deposition
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikoma, Y., Endo, T., Tada, T., Watanabe, F., & Motooka, T. (2000). Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets. Materials Science Forum, 338-342, 265-268.

Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets. / Ikoma, Yoshifumi; Endo, T.; Tada, T.; Watanabe, F.; Motooka, T.

In: Materials Science Forum, Vol. 338-342, 2000, p. 265-268.

Research output: Contribution to journalArticle

Ikoma, Y, Endo, T, Tada, T, Watanabe, F & Motooka, T 2000, 'Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets', Materials Science Forum, vol. 338-342, pp. 265-268.
Ikoma, Yoshifumi ; Endo, T. ; Tada, T. ; Watanabe, F. ; Motooka, T. / Growth of 3C-SiC/Si multilayer heterostructures by supersonic free jets. In: Materials Science Forum. 2000 ; Vol. 338-342. pp. 265-268.
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