Growth of A-axis-oriented YBa2Cu3Ox films on Gd2CuO4 buffer layers

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A-axis-oriented YBa2Cu3Ox films are grown on lattice matched Gd2CuO4 buffer layers with a K2NiF4-type structure on (100) SrLaGaO4 substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa2Cu3Ox films are grown in a relatively wide temperature range by using a new Gd2CuO4 buffer layer. The bc-plane lattice matched K2NiF4 (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa2Cu3Ox films.

Original languageEnglish
Pages (from-to)L767-L770
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number6
Publication statusPublished - Jan 1 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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