Abstract
A-axis-oriented YBa2Cu3Ox films are grown on lattice matched Gd2CuO4 buffer layers with a K2NiF4-type structure on (100) SrLaGaO4 substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa2Cu3Ox films are grown in a relatively wide temperature range by using a new Gd2CuO4 buffer layer. The bc-plane lattice matched K2NiF4 (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa2Cu3Ox films.
Original language | English |
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Pages (from-to) | L767-L770 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 36 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jan 1 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)