Growth of A-axis-oriented YBa2Cu3Ox films on Gd2CuO4 buffer layers

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A-axis-oriented YBa2Cu3Ox films are grown on lattice matched Gd2CuO4 buffer layers with a K2NiF4-type structure on (100) SrLaGaO4 substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa2Cu3Ox films are grown in a relatively wide temperature range by using a new Gd2CuO4 buffer layer. The bc-plane lattice matched K2NiF4 (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa2Cu3Ox films.

Original languageEnglish
Pages (from-to)L767-L770
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number6
DOIs
Publication statusPublished - Jan 1 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Growth of A-axis-oriented YBa<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub> films on Gd<sub>2</sub>CuO<sub>4</sub> buffer layers'. Together they form a unique fingerprint.

  • Cite this