Growth of A-axis-oriented YBa2Cu3Ox films on Gd2CuO4 buffer layers

Masashi Mukaida

doi:10.1143/jjap.36.l767

Growth of A-axis-oriented YBa₂Cu₃O_x films on Gd₂CuO₄ buffer layers

Masashi Mukaida

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

A-axis-oriented YBa₂Cu₃O_x films are grown on lattice matched Gd₂CuO₄ buffer layers with a K₂NiF₄-type structure on (100) SrLaGaO₄ substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa₂Cu₃O_x films are grown in a relatively wide temperature range by using a new Gd₂CuO₄ buffer layer. The bc-plane lattice matched K₂NiF₄ (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa₂Cu₃O_x films.

Original language	English
Pages (from-to)	L767-L770
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	6
DOIs	https://doi.org/10.1143/jjap.36.l767
Publication status	Published - Jan 1 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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abstract = "A-axis-oriented YBa2Cu3Ox films are grown on lattice matched Gd2CuO4 buffer layers with a K2NiF4-type structure on (100) SrLaGaO4 substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa2Cu3Ox films are grown in a relatively wide temperature range by using a new Gd2CuO4 buffer layer. The bc-plane lattice matched K2NiF4 (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa2Cu3Ox films.",

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AB - A-axis-oriented YBa2Cu3Ox films are grown on lattice matched Gd2CuO4 buffer layers with a K2NiF4-type structure on (100) SrLaGaO4 substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa2Cu3Ox films are grown in a relatively wide temperature range by using a new Gd2CuO4 buffer layer. The bc-plane lattice matched K2NiF4 (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa2Cu3Ox films.

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Growth of A-axis-oriented YBa₂Cu₃O_x films on Gd₂CuO₄ buffer layers

Abstract

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