Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Robert F. Davis, T. W. Weeks, M. D. Bremser, S. Tanaka, R. S. Kern, Z. Sitar, K. S. Ailey, W. G. Perry, C. Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Thin films of AlN and GaN are deposited primarily via the common forms of organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AlN and GaN primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces inversion domain boundaries in the AlN at the SiC steps; this sequence problem may discourage the nucleation of GaN. Films of AlN and GaN grown by MBE at 650°C are textured; monocrystalline films are achieved at 1050°C by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalSolid-State Electronics
Volume41
Issue number2 SPEC. ISS.
Publication statusPublished - Feb 1 1997
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
molecular beam epitaxy
Thin films
Nucleation
thin films
Doping (additives)
gases
nucleation
Annealing
annealing
Dry etching
Wet etching
Aluminum Oxide
Defect density
Buffer layers
Sapphire

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., ... Wang, C. (1997). Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization. Solid-State Electronics, 41(2 SPEC. ISS.), 129-134.

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization. / Davis, Robert F.; Weeks, T. W.; Bremser, M. D.; Tanaka, S.; Kern, R. S.; Sitar, Z.; Ailey, K. S.; Perry, W. G.; Wang, C.

In: Solid-State Electronics, Vol. 41, No. 2 SPEC. ISS., 01.02.1997, p. 129-134.

Research output: Contribution to journalArticle

Davis, RF, Weeks, TW, Bremser, MD, Tanaka, S, Kern, RS, Sitar, Z, Ailey, KS, Perry, WG & Wang, C 1997, 'Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization', Solid-State Electronics, vol. 41, no. 2 SPEC. ISS., pp. 129-134.
Davis RF, Weeks TW, Bremser MD, Tanaka S, Kern RS, Sitar Z et al. Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization. Solid-State Electronics. 1997 Feb 1;41(2 SPEC. ISS.):129-134.
Davis, Robert F. ; Weeks, T. W. ; Bremser, M. D. ; Tanaka, S. ; Kern, R. S. ; Sitar, Z. ; Ailey, K. S. ; Perry, W. G. ; Wang, C. / Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization. In: Solid-State Electronics. 1997 ; Vol. 41, No. 2 SPEC. ISS. pp. 129-134.
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