Growth of BaSnO3 doped ErBa2Cu3O 7-δ Thin Films on MgO Substrates for High Jc Applications

Masashi Mukaida, Shuhei Yasunaga, Ryo Teranishi, Nobuyuki Mori, Ataru Ichinose, Shigeru Horii, Kaname Matsumoto, Yutaka Yoshida, Ryusuke Kita

    Research output: Contribution to journalArticlepeer-review


    We compared Jc properties of i) Pure ErBa2Cu 3O7-δ films on BaZrO3 buffered MgO substrates, ii) Pure ErBa2Cu3O7-δ films on SrTiO3 substrates, iii) BaSnO3 doped ErBa 2Cu3O7-δ ilms on SrTiO3 substrates, and iv) BaSnO3 doped ErBa2Cu3O 7-δ films on BaSnO3 buffered MgO substrates. The lowest Jc was obtained from pure ErBa2Cu3O 7-δ films on SrTiO3 substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa2Cu3O7-δ films on BaSnO 3 buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest Jc was obtained from BaSnO 3 doped ErBa2Cu3O7-δ films on SrTiO3 substrates. Almost the same Jc was obtained from BaSnO3 doped ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates. 2wt% BaSnO3 doping into ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates are very effective to enhance J cs of the films at a high magnetic field.

    Original languageEnglish
    Article number5152913
    Pages (from-to)3416-3419
    Number of pages4
    JournalIEEE Transactions on Applied Superconductivity
    Issue number3
    Publication statusPublished - Jun 2009

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering


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