Abstract
A novel method for growth of epitaxial silicon films on Si substrates at a low temperature of 400 °C has been developed using a sputtering-type electron cyclotron resonance plasma. The chamber has a base pressure of 5×10-7 Torr, and the growth method includes in situ cleaning of Si substrates using suitable plasma bombardment and subsequent deposition at a high sputter rate to prevent impurity monolayer formation at the beginning of the deposition. The epitaxial growth conditions were investigated using spectroscopic ellipsometry and electron backscattering diffraction, and the effect of the Ar gas flow rate, for both the in situ cleaning and the deposition conditions, was studied. At the optimum growth conditions, Si thin films having characteristics close to crystal Si substrates were obtained. The deposition rate was as high as 6 nm/min.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 38 |
| Issue number | 3 A |
| Publication status | Published - 1999 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Growth of epitaxial silicon film at low temperature by using sputtering-type electron cyclotron resonance plasma. / Gao, Junsi; Nakashima, Hiroshi; Sakai, Naofumi; Gao, Dawei; Wang, Junli; Furukawa, Katsuhiko; Muraoka, Katsunori.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 3 A, 1999.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Growth of epitaxial silicon film at low temperature by using sputtering-type electron cyclotron resonance plasma
AU - Gao, Junsi
AU - Nakashima, Hiroshi
AU - Sakai, Naofumi
AU - Gao, Dawei
AU - Wang, Junli
AU - Furukawa, Katsuhiko
AU - Muraoka, Katsunori
PY - 1999
Y1 - 1999
N2 - A novel method for growth of epitaxial silicon films on Si substrates at a low temperature of 400 °C has been developed using a sputtering-type electron cyclotron resonance plasma. The chamber has a base pressure of 5×10-7 Torr, and the growth method includes in situ cleaning of Si substrates using suitable plasma bombardment and subsequent deposition at a high sputter rate to prevent impurity monolayer formation at the beginning of the deposition. The epitaxial growth conditions were investigated using spectroscopic ellipsometry and electron backscattering diffraction, and the effect of the Ar gas flow rate, for both the in situ cleaning and the deposition conditions, was studied. At the optimum growth conditions, Si thin films having characteristics close to crystal Si substrates were obtained. The deposition rate was as high as 6 nm/min.
AB - A novel method for growth of epitaxial silicon films on Si substrates at a low temperature of 400 °C has been developed using a sputtering-type electron cyclotron resonance plasma. The chamber has a base pressure of 5×10-7 Torr, and the growth method includes in situ cleaning of Si substrates using suitable plasma bombardment and subsequent deposition at a high sputter rate to prevent impurity monolayer formation at the beginning of the deposition. The epitaxial growth conditions were investigated using spectroscopic ellipsometry and electron backscattering diffraction, and the effect of the Ar gas flow rate, for both the in situ cleaning and the deposition conditions, was studied. At the optimum growth conditions, Si thin films having characteristics close to crystal Si substrates were obtained. The deposition rate was as high as 6 nm/min.
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M3 - Article
VL - 38
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -