Growth of epitaxial silicon film at low temperature by using sputtering-type electron cyclotron resonance plasma

Junsi Gao, Hiroshi Nakashima, Naofumi Sakai, Dawei Gao, Junli Wang, Katsuhiko Furukawa, Katsunori Muraoka

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    A novel method for growth of epitaxial silicon films on Si substrates at a low temperature of 400 °C has been developed using a sputtering-type electron cyclotron resonance plasma. The chamber has a base pressure of 5×10-7 Torr, and the growth method includes in situ cleaning of Si substrates using suitable plasma bombardment and subsequent deposition at a high sputter rate to prevent impurity monolayer formation at the beginning of the deposition. The epitaxial growth conditions were investigated using spectroscopic ellipsometry and electron backscattering diffraction, and the effect of the Ar gas flow rate, for both the in situ cleaning and the deposition conditions, was studied. At the optimum growth conditions, Si thin films having characteristics close to crystal Si substrates were obtained. The deposition rate was as high as 6 nm/min.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume38
    Issue number3 A
    Publication statusPublished - 1999

    Fingerprint

    Electron cyclotron resonance
    electron cyclotron resonance
    silicon films
    Sputtering
    sputtering
    Plasmas
    Silicon
    Cleaning
    Substrates
    cleaning
    Spectroscopic ellipsometry
    Backscattering
    Deposition rates
    base pressure
    Epitaxial growth
    Temperature
    Flow of gases
    Monolayers
    Diffraction
    Flow rate

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Cite this

    Growth of epitaxial silicon film at low temperature by using sputtering-type electron cyclotron resonance plasma. / Gao, Junsi; Nakashima, Hiroshi; Sakai, Naofumi; Gao, Dawei; Wang, Junli; Furukawa, Katsuhiko; Muraoka, Katsunori.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 3 A, 1999.

    Research output: Contribution to journalArticle

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    AU - Nakashima, Hiroshi

    AU - Sakai, Naofumi

    AU - Gao, Dawei

    AU - Wang, Junli

    AU - Furukawa, Katsuhiko

    AU - Muraoka, Katsunori

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