Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor

R. Kita, T. Nakamura, A. Ichinose, O. Miura, K. Matsumoto, Y. Yoshida, M. Mukaida, S. Horii

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the influences of the heating rate and film thickness on the growth of GdBa2Cu3Oy, (GBCO) thin films prepared by the BaF2 ex-situ process without water vapor. Critical current density (Jc) and surface morphology of the GBCO films were improved by increasing the heating rate during growth from 30 to 50°C/min. The GBCO films prepared by the heating rate of 50°C/min had the maximum Jc of 2.1 MA/cm2. The Jc value of the GBCO films was about 2 MA/cm2 up to 200 nm, and decreased to 0.92 MA/cm2 at 400 nm.

Original languageEnglish
Pages (from-to)1377-1382
Number of pages6
JournalModern Physics Letters B
Volume21
Issue number21
DOIs
Publication statusPublished - Sep 10 2007

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Water Vapor
Steam
Heating rate
Water vapor
water vapor
Heating
heating
Surface morphology
Surface Morphology
Film thickness
critical current
film thickness
current density
Thin Films
Thin films
thin films

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

Cite this

Kita, R., Nakamura, T., Ichinose, A., Miura, O., Matsumoto, K., Yoshida, Y., ... Horii, S. (2007). Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor. Modern Physics Letters B, 21(21), 1377-1382. https://doi.org/10.1142/S0217984907013705

Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor. / Kita, R.; Nakamura, T.; Ichinose, A.; Miura, O.; Matsumoto, K.; Yoshida, Y.; Mukaida, M.; Horii, S.

In: Modern Physics Letters B, Vol. 21, No. 21, 10.09.2007, p. 1377-1382.

Research output: Contribution to journalArticle

Kita, R, Nakamura, T, Ichinose, A, Miura, O, Matsumoto, K, Yoshida, Y, Mukaida, M & Horii, S 2007, 'Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor', Modern Physics Letters B, vol. 21, no. 21, pp. 1377-1382. https://doi.org/10.1142/S0217984907013705
Kita R, Nakamura T, Ichinose A, Miura O, Matsumoto K, Yoshida Y et al. Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor. Modern Physics Letters B. 2007 Sep 10;21(21):1377-1382. https://doi.org/10.1142/S0217984907013705
Kita, R. ; Nakamura, T. ; Ichinose, A. ; Miura, O. ; Matsumoto, K. ; Yoshida, Y. ; Mukaida, M. ; Horii, S. / Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor. In: Modern Physics Letters B. 2007 ; Vol. 21, No. 21. pp. 1377-1382.
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