Growth of high-quality multicrystalline Si ingots using noncontact crucible method

Engineering & Materials Science

• Crucibles 100%
• Ingots 86%
• Silica 21%
• Crystal growth 19%
• Carrier lifetime 10%
• Crystal structure 8%
• Silicon nitride 8%
• Seed 7%
• Solidification 6%
• Coatings 5%

Physics & Astronomy

• crucibles 83%
• ingots 81%
• silicon dioxide 15%
• crystal growth 12%
• carrier lifetime 7%
• minority carriers 7%
• silicon nitrides 6%
• seeds 6%
• solidification 6%
• flexibility 6%
• crystal structure 5%
• wafers 5%

Chemical Compounds

• Crucible 89%
• Twin Boundary 21%
• Crystal Growth 13%
• Solidification 7%
• Grain Boundary 7%
• Nitride 6%
• Flexibility 5%