Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate

Carlo M. Orofeo, Hiroki Ago, Tatsuya Ikuta, Koji Takahasi, Masaharu Tsuji

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO2/Si is desirable. We developed a new method to horizontally align SWNTs directly on SiO2/Si substrate by creating trenches on Si(100) through anisotropic etching followed by thermal oxidation. The V-shaped trenches highly improved the alignment of SWNTs and the degree of alignment is comparable to the step-templated alignment of carbon nanotubes on crystals. The trenches also improved the density of aligned nanotubes due to the combination of "trench-guided" and gas-flow guided alignment. Our new insights on carbon nanotube alignment on SiO2/Si will greatly contribute to future large-scale nanoelectronic applications.

    Original languageEnglish
    Pages (from-to)1708-1714
    Number of pages7
    JournalNanoscale
    Volume2
    Issue number9
    DOIs
    Publication statusPublished - Sep 2010

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)

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