Growth of metastable γ-AIN by pulsed laser deposition

Tsuyoshi Yoshitake, Satoshi Mohri, Takeshi Hara, Kunihito Nagayama

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered A1N target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. The central area of the film was partially studded with cubic AlN (β-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable β-AIN.

    Original languageEnglish
    Pages (from-to)3600-3602
    Number of pages3
    JournalJapanese journal of applied physics
    Volume47
    Issue number5 PART 1
    DOIs
    Publication statusPublished - May 16 2008

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Growth of metastable γ-AIN by pulsed laser deposition'. Together they form a unique fingerprint.

    Cite this