Growth of metastable γ-AIN by pulsed laser deposition

Tsuyoshi Yoshitake, Satoshi Mohri, Takeshi Hara, Kunihito Nagayama

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered A1N target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. The central area of the film was partially studded with cubic AlN (β-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable β-AIN.

    Original languageEnglish
    Pages (from-to)3600-3602
    Number of pages3
    JournalJapanese journal of applied physics
    Issue number5 PART 1
    Publication statusPublished - May 16 2008

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)


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