TY - JOUR
T1 - Growth of metastable γ-AIN by pulsed laser deposition
AU - Yoshitake, Tsuyoshi
AU - Mohri, Satoshi
AU - Hara, Takeshi
AU - Nagayama, Kunihito
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2008/5/16
Y1 - 2008/5/16
N2 - Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered A1N target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. The central area of the film was partially studded with cubic AlN (β-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable β-AIN.
AB - Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered A1N target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. The central area of the film was partially studded with cubic AlN (β-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable β-AIN.
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U2 - 10.1143/JJAP.47.3600
DO - 10.1143/JJAP.47.3600
M3 - Article
AN - SCOPUS:55049137218
SN - 0021-4922
VL - 47
SP - 3600
EP - 3602
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 PART 1
ER -