TY - JOUR
T1 - Growth of MnGeP2 thin films by molecular beam epitaxy
AU - Minami, Kazuyuki
AU - Jogo, Jumpei
AU - Smirnov, Valery
AU - Yuasa, Hideki
AU - Nagatsuka, Toshikazu
AU - Ishibashi, Takayuki
AU - Morishita, Yoshitaka
AU - Matsuo, Yuriko
AU - Kangawa, Yoshihiro
AU - Koukitu, Akinori
AU - Sato, Katsuaki
PY - 2005
Y1 - 2005
N2 - Epitaxial growth of the Mn-containing novel ternary compound MnGeP 2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2: with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a = 0.569 nm and c = 1.13 nm based on the assumption that the material has a tetragonal crystal structure,
AB - Epitaxial growth of the Mn-containing novel ternary compound MnGeP 2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2: with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a = 0.569 nm and c = 1.13 nm based on the assumption that the material has a tetragonal crystal structure,
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U2 - 10.1143/JJAP.44.L265
DO - 10.1143/JJAP.44.L265
M3 - Article
AN - SCOPUS:21144463877
SN - 0021-4922
VL - 44
SP - L265-L267
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 8-11
ER -