Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall

Kazuo Nakajima, Ryota Murai, Kohei Morishita, Kentaro Kutsukake, Noritaka Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Conventional crystal growth methods using crucibles cannot control the stress caused by expansion due to the solidification of the Si melt. We proposed a noncontact crucible method using a conventional crucible that reduces the stress in Si multicrystalline ingots. In this method, nucleation occurs on the surface of a Si melt using seed crystals, and crystals grow inside the Si melt without touching the crucible walls. Then, the ingots continue to grow while being slowly pulled upward to ensure that the crystal growth remains in the Si melt. A Si ingot with a diameter of 23 cm was obtained in a crucible with a diameter of 30 cm. The maximum solidification ratio in the growth was more than 80%. We have confirmed that such noncontact crucible growth was possible using a conventional crucible.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1830-1832
Number of pages3
DOIs
Publication statusPublished - Nov 26 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Crucibles
Ingots
Solar cells
Crystal growth
Solidification
Crystals
Nucleation

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Nakajima, K., Murai, R., Morishita, K., Kutsukake, K., & Usami, N. (2012). Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 1830-1832). [6317949] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317949

Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall. / Nakajima, Kazuo; Murai, Ryota; Morishita, Kohei; Kutsukake, Kentaro; Usami, Noritaka.

Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 1830-1832 6317949 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, K, Murai, R, Morishita, K, Kutsukake, K & Usami, N 2012, Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317949, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1830-1832, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317949
Nakajima K, Murai R, Morishita K, Kutsukake K, Usami N. Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 1830-1832. 6317949. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317949
Nakajima, Kazuo ; Murai, Ryota ; Morishita, Kohei ; Kutsukake, Kentaro ; Usami, Noritaka. / Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall. Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. pp. 1830-1832 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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