TY - GEN
T1 - Growth of periodic ZnO nano-crystals on buffer layer patterned by interference laser irradiation
AU - Nakamura, D.
AU - Shimogaki, T.
AU - Okazaki, K.
AU - Higashihata, M.
AU - Nakata, Y.
AU - Okada, T.
PY - 2013
Y1 - 2013
N2 - Zinc oxide (ZnO) nano-crystal is great interest for optoelectronic applications in particular ultraviolet (UV) region such as UV-LEDs, UV-lasers, etc. For the practical optoelectronic applications based on the ZnO nanocrystals, control of nanowire growth direction, shape, density, and position are essentially required. In our study, we introduced a ZnO buffer layer and interference laser irradiation to control the growth position of ZnO nanocrystals. In this presentation, structural and morphological characteristics of periodic ZnO nano-crystals synthesized by the nanoparticle-assisted pulsed laser deposition will be discussed.
AB - Zinc oxide (ZnO) nano-crystal is great interest for optoelectronic applications in particular ultraviolet (UV) region such as UV-LEDs, UV-lasers, etc. For the practical optoelectronic applications based on the ZnO nanocrystals, control of nanowire growth direction, shape, density, and position are essentially required. In our study, we introduced a ZnO buffer layer and interference laser irradiation to control the growth position of ZnO nanocrystals. In this presentation, structural and morphological characteristics of periodic ZnO nano-crystals synthesized by the nanoparticle-assisted pulsed laser deposition will be discussed.
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U2 - 10.1117/12.2002961
DO - 10.1117/12.2002961
M3 - Conference contribution
AN - SCOPUS:84878189932
SN - 9780819493767
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII
T2 - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII
Y2 - 4 February 2013 through 7 February 2013
ER -