Growth of phosphorus-doped polycrystalline diamond films and their application to field emitters

Takashi Sugino, Yukio Iwasaki, Seiji Kawasaki, Reiji Hattori, Junji Shirafuji

Research output: Contribution to journalArticle

Abstract

Synthesis of diamond films doped with phosphorus (P) impurities has been carried out by a hot-filament chemical vapor deposition method using CH3OH and H2 as the source gas mixture. P2O5 is dissolved in CH3OH and transported with H2 into a reaction chamber. Current-voltage characteristics are obtained at various temperatures for P-doped diamond films. The activation energy of the conductivity is estimated to be 0.49 eV from the Arrhenius plot. Electron emission is observed for the P-doped diamond film. The threshold electric field is estimated to be 14 V/μm. Emission current as high as 10 μA is obtained.

Original languageEnglish
Pages (from-to)29-35
Number of pages7
JournalNew Diamond and Frontier Carbon Technology
Volume8
Issue number1
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Diamond films
diamond films
Phosphorus
phosphorus
emitters
phosphorus pentoxide
Arrhenius plots
Electron emission
Current voltage characteristics
Gas mixtures
electron emission
gas mixtures
Chemical vapor deposition
filaments
Activation energy
chambers
plots
Electric fields
vapor deposition
Impurities

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Growth of phosphorus-doped polycrystalline diamond films and their application to field emitters. / Sugino, Takashi; Iwasaki, Yukio; Kawasaki, Seiji; Hattori, Reiji; Shirafuji, Junji.

In: New Diamond and Frontier Carbon Technology, Vol. 8, No. 1, 1998, p. 29-35.

Research output: Contribution to journalArticle

Sugino, Takashi ; Iwasaki, Yukio ; Kawasaki, Seiji ; Hattori, Reiji ; Shirafuji, Junji. / Growth of phosphorus-doped polycrystalline diamond films and their application to field emitters. In: New Diamond and Frontier Carbon Technology. 1998 ; Vol. 8, No. 1. pp. 29-35.
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