Growth of phosphorus-doped polycrystalline diamond films and their application to field emitters

Takashi Sugino, Yukio Iwasaki, Seiji Kawasaki, Reiji Hattori, Junji Shirafuji

Research output: Contribution to journalArticlepeer-review

Abstract

Synthesis of diamond films doped with phosphorus (P) impurities has been carried out by a hot-filament chemical vapor deposition method using CH3OH and H2 as the source gas mixture. P2O5 is dissolved in CH3OH and transported with H2 into a reaction chamber. Current-voltage characteristics are obtained at various temperatures for P-doped diamond films. The activation energy of the conductivity is estimated to be 0.49 eV from the Arrhenius plot. Electron emission is observed for the P-doped diamond film. The threshold electric field is estimated to be 14 V/μm. Emission current as high as 10 μA is obtained.

Original languageEnglish
Pages (from-to)29-35
Number of pages7
JournalNew Diamond and Frontier Carbon Technology
Volume8
Issue number1
Publication statusPublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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