Synthesis of diamond films doped with phosphorus (P) impurities has been carried out by a hot-filament chemical vapor deposition method using CH3OH and H2 as the source gas mixture. P2O5 is dissolved in CH3OH and transported with H2 into a reaction chamber. Current-voltage characteristics are obtained at various temperatures for P-doped diamond films. The activation energy of the conductivity is estimated to be 0.49 eV from the Arrhenius plot. Electron emission is observed for the P-doped diamond film. The threshold electric field is estimated to be 14 V/μm. Emission current as high as 10 μA is obtained.
|Number of pages||7|
|Journal||New Diamond and Frontier Carbon Technology|
|Publication status||Published - 1998|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films