Epitaxial growth condition of Bi2Ti2O7 films on the substrates having rutile-structure was investigated. TiO 2 single crystals and the conductive epitaxial IrO2 layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi2Ti2O7 films were confirmed to be deposited on (110) TiO2 substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO2 substrates. The epitaxial growths of Bi 2Ti2O7 films were confirmed on (100), (001) and (110) TiO2 substrates, where two variants were observed on (100) and (110) TiO2 substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi2Ti2O7//(100)TiO 2, (112)Bi2Ti2O7//(101)Ti O2, and (111)Bi2Ti2O7//(110)TiO 2. Same epitaxial growth was confirmed only on (110)IrO 2//(110)TiO2 substrate, but not on (101)IrO 2//(012)Al2O3 and (100)IrO2//(100) TiO2 substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi 2Ti2O7 film grown on(110)IrO 2//(110)TiO2 substrate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry