Growth of semiconductor silicon crystals

Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano

Research output: Contribution to journalReview article

8 Citations (Scopus)

Abstract

This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

Original languageEnglish
Pages (from-to)273-285
Number of pages13
JournalProgress in Crystal Growth and Characterization of Materials
Volume62
Issue number2
DOIs
Publication statusPublished - Jun 1 2016

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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