Growth of Si on Ag(111) and determination of large commensurate unit cell of high-temperature phase

Md Sazzadur Rahman, Takeshi Nakagawa, Seigi Mizuno

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    20 Citations (Scopus)

    Abstract

    We studied the structural transition for silicon adsorption on Ag(111) by using low-energy electron diffraction (LEED) and Auger electron spectroscopy at various substrate temperatures during deposition. We obtained a single phase of the (4 × 4) structure at 520 K, which was reported as a silicene. At 620 K, the (4 × 4) structure changed to a high-temperature phase which was determined as ( √133 × √133) R 4.3° by LEED, while in preceding works, it was assigned to a quasi (2√3 × 2√3) R 30° or (3.5 × 3.5) R 26° structure. Although the high-temperature phase had not been observed as a single phase, we obtained LEED patterns with a single phase for it, which enabled us to explain all the diffraction spots on the basis of the kinematic theory including double diffraction. The (√133 × √133) R 4.3° was obtained by the multiplication of a (1.35 × 1.35) R 9.9° subunit cell. We concluded that the (2 √3 × 2√3) R 30° and (3.5 × 3.5) R 26° phases could instead be represented as a ( √133× √133) R 4.3° phase, and we proposed a possible atomic model.

    Original languageEnglish
    Number of pages1
    JournalJapanese Journal of Applied Physics
    Volume54
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2015

    Fingerprint

    Low energy electron diffraction
    electron diffraction
    Diffraction
    cells
    Auger electron spectroscopy
    diffraction
    multiplication
    Temperature
    Diffraction patterns
    Auger spectroscopy
    electron spectroscopy
    energy
    Kinematics
    kinematics
    diffraction patterns
    Adsorption
    Silicon
    adsorption
    silicon
    Substrates

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

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    abstract = "We studied the structural transition for silicon adsorption on Ag(111) by using low-energy electron diffraction (LEED) and Auger electron spectroscopy at various substrate temperatures during deposition. We obtained a single phase of the (4 × 4) structure at 520 K, which was reported as a silicene. At 620 K, the (4 × 4) structure changed to a high-temperature phase which was determined as ( √133 × √133) R 4.3° by LEED, while in preceding works, it was assigned to a quasi (2√3 × 2√3) R 30° or (3.5 × 3.5) R 26° structure. Although the high-temperature phase had not been observed as a single phase, we obtained LEED patterns with a single phase for it, which enabled us to explain all the diffraction spots on the basis of the kinematic theory including double diffraction. The (√133 × √133) R 4.3° was obtained by the multiplication of a (1.35 × 1.35) R 9.9° subunit cell. We concluded that the (2 √3 × 2√3) R 30° and (3.5 × 3.5) R 26° phases could instead be represented as a ( √133× √133) R 4.3° phase, and we proposed a possible atomic model.",
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    AB - We studied the structural transition for silicon adsorption on Ag(111) by using low-energy electron diffraction (LEED) and Auger electron spectroscopy at various substrate temperatures during deposition. We obtained a single phase of the (4 × 4) structure at 520 K, which was reported as a silicene. At 620 K, the (4 × 4) structure changed to a high-temperature phase which was determined as ( √133 × √133) R 4.3° by LEED, while in preceding works, it was assigned to a quasi (2√3 × 2√3) R 30° or (3.5 × 3.5) R 26° structure. Although the high-temperature phase had not been observed as a single phase, we obtained LEED patterns with a single phase for it, which enabled us to explain all the diffraction spots on the basis of the kinematic theory including double diffraction. The (√133 × √133) R 4.3° was obtained by the multiplication of a (1.35 × 1.35) R 9.9° subunit cell. We concluded that the (2 √3 × 2√3) R 30° and (3.5 × 3.5) R 26° phases could instead be represented as a ( √133× √133) R 4.3° phase, and we proposed a possible atomic model.

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