Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si3N 4 particles

Kazuo Nakajima, Ryota Murai, Kohei Morishita, Kentaro Kutsukake

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A noncontact crucible method for reducing stress in Si bulk crystals was proposed. In this method, the Si melt used has a large low-temperature region to ensure natural Si crystal growth inside it. Compared with the conventional growth methods, the present method has several merits such as the convex shape of the growing interface in the growth direction, the possibility of growing large ingots even with the use of a small crucible, and the low O concentration in the ingots because of the small convection in the Si melt due to existence of the large low-temperature region. We have confirmed that by using crucibles without coating Si3N4 particles, p-type Si single bulk crystals can be grown inside a Si melt without contacting with the crucible wall. The single bulk crystals grown had low dislocation densities (on the order of 103/cm2). The diameter of the ingot obtained using a crucible with a 30 cm diameter was 22cm. The O concentration in the present ingots was relatively lower than that in ingots grown by the CZ method. An n-type ingot was grown using a crucible without Si3N4 coating. Several Σ3 twin grain boundaries were observed in the cross section of the ingot. The average minority carrier lifetime of an n-type wafer was higher than that for p-type wafers.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages174-176
Number of pages3
ISBN (Print)9781479932993
DOIs
Publication statusPublished - Jan 1 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Crucibles
Ingots
Silica
Coatings
Crystals
Carrier lifetime
Dislocations (crystals)
Crystal growth
Grain boundaries
Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Nakajima, K., Murai, R., Morishita, K., & Kutsukake, K. (2013). Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si3N 4 particles. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 174-176). [6744123] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744123

Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si3N 4 particles. / Nakajima, Kazuo; Murai, Ryota; Morishita, Kohei; Kutsukake, Kentaro.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 174-176 6744123 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, K, Murai, R, Morishita, K & Kutsukake, K 2013, Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si3N 4 particles. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744123, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 174-176, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744123
Nakajima K, Murai R, Morishita K, Kutsukake K. Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si3N 4 particles. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 174-176. 6744123. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6744123
Nakajima, Kazuo ; Murai, Ryota ; Morishita, Kohei ; Kutsukake, Kentaro. / Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si3N 4 particles. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 174-176 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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