Growth of Si/3C-SiC/Si(100) heterostructures by pulsed supersonic free jets

Yoshifumi Ikoma, T. Endo, F. Watanabe, T. Motooka

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Abstract

We have investigated the epitaxial growth of multilayer structures of Si/3C-SiC/Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3) for SiC growth and trisilane (Si3H8) for Si growth. Epitaxial Si layers were obtained only on very thin (≈3 nm) 3C-SiC epitaxial layers, while polycrystalline Si was grown on thicker 3C-SiC layers. It was also found that the transition regions with a thickness of ≈1 nm existed at the interface between epitaxial 3C-SiC and Si layers by high-resolution transmission electron microscopy observation. These results suggest that the surface roughness and thickness of the 3C-SiC layer play an important role for epitaxial growth of Si.

Original languageEnglish
Pages (from-to)3977-3979
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number25
DOIs
Publication statusPublished - Dec 20 1999

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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